超薄氧化層純水補償技術及氫對ONO介電層可靠度之影響

楊宜霖

doi:10.6342/NTU.2009.00815

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超薄氧化層純水補償技術及氫對ONO介電層可靠度之影響

Compensation Technique of Ultra-Thin Oxide in D.I. Water and the Effect of Hydrogen on the Reliability of Oxide-Nitride-Oxide (ONO) Dielectrics

楊宜霖 , Ph.D　　Advisor：胡振國　　

英文 DOI： 10.6342/NTU.2009.00815

超薄氧化層；高介電常數閘極介電質；電荷儲存快閃記憶體；氫抺除； Ultra-thin oxide ； high-k gate dielectric ； charge trapping flash memory ； hydrogen erase

Abstract │ Reference (84) │ Altmetrics

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In this work, a method named scanning-frequency anodization (SF-ANO) was proposed to improve the quality of ultra-thin thermally grown SiO2. The frequency condition of SF is from 20Hz to 200kHz. After SF-ANO treatment, the gate leakage current of 18&Aring; SiO2 is 1.5A/cm2 at -2 V, which is 75% off compare with the device with the same thickness without ANO treatment. Besides, 25% reduction in interface trap density (Dit) can also be observed after SF-ANO treatment. 
High performance trap-less MAD Al2O3 was then used to replace the tunnel and block layer in MONOS type flash memory because of the suppressed gate leakage current at low electric field and enhanced tunneling current at high electric field, and a MANAS stack is obtained. 6V erase window can be achieved in 10ms by using -16V erase voltage. Besides, the 10-year projected retention window is as large as 4.9V at 85oC, and 5.3V at RT.
Hydrogen is found to invade into nitride-based charge trapping memory stack from the edge and neutralize the trapping electrons as baking at temperature of 400oC or above. Regardless of the programmed flatband voltages (VFB) are, all the devices had the same VFB at the edge of the devices. Hydrogen invasion occurs only in the programmed ONO devices; a non-programmed ONO device would not be affected. The experimental results are suggested to solve the problems of UV or plasma induced charge trapping. The UV induced trapping charges can be eliminated in 15 minutes as baking at 400oC.

Reference ( 84 ) 〈TOP〉

[2]. Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi, “Band Gap Enhancement and Electrical Properties of La2O3 Films Doped with Y2O3 as High-k Gate Insulators ”, Applied Physics Letters, Vol. 94, pp. 042901, 2009
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[4]. E. Nadimi, C. Golz, M. Trentzsch, L. Herrmann, K. Wieczorek, and C. Radehaus, “Tunneling Effective Mass of Electrons in Lightly N-Doped SiOxNy Gate Insulators,” IEEE Transactions on Electron Devices, pp. 2462-2468, 2008
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[5]. International Technology Roadmap for Semiconductor. [Online]. Available: http://public.itrs.net
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[8]. D.A. Muller, T. Sorsch, S. Moccio, F.H. Baumann, K. Evans-Lutterodt, and G. Timp, “The Electronic Structure at The Atomic Scale of Ultrathin Gate Oxide,” Nature, Vol. 339, pp. 758-761, 1999.
連結：
[9]. J.B. Neaton, D.A. Muller, and N.W. Ashcroft, “Electronic Properties of The SiO2/Si Interface from First Principle,” Physical Review Letter, Vol. 85, pp. 1298, 2000
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