利用奈米金屬團簇製備奈米結構於光電元件之應用

陳宜群

doi:10.6342/NTU.2012.01764

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利用奈米金屬團簇製備奈米結構於光電元件之應用

Using metallic nanoclusters to prepare nanostructures for optoelectronic device applications

陳宜群 , Masters　　Advisor：陳學禮　　

繁體中文 DOI： 10.6342/NTU.2012.01764

金屬輔助化學蝕刻；侵入式奈米金團簇；微米奈米複合結構；廣角度寬波段抗反射層；矽太陽能電池； metal-assisted chemical etching ； intruded gold nanoclusters ； micro-nano hybrid structure ； omnidirectional broadband antireflection ； silicon solar cell

Abstract │ Reference (52) │ Altmetrics

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The antireflective coatings play an important role in solar cells due to its ability to reduce the reflection of light from the solar cell surface, and thus increase the light harvesting of solar cells. However, the incident angles of incoming light are not always normal to the solar cell surface. Therefore, to remain the great antireflective characteristic at large incident angles for the antireflective coatings become an essential issue.
In this study, we fabricate the broadband omnidirectional antireflective structures in two ways. The first method is that we utilize the intruded gold nanoclusters (INC) to prepare micro-nano hybrid structures on a silicon substrate. The hybrid structures display great broadband omnidirectional antireflective characteristic, and the average reflectance is down to 1.64% under normal incidence. Besides, the reflectances of the hybrid structures under various incident angles are lower than that of the antireflective structures on conventional solar cells. Moreover, combining the INC method and the ultrasonic etching process can result in much faster process for preparing antireflective structures, making us obtain excellent antireflective structures within just a few seconds. The other method is to deposit dielectric multilayer films on textured silicon substrate for fabricating the autocloning structures. We design two kinds of autocloning structures, and we conclude from the simulation results that these structures exhibit better antireflective characteristic than that of the antireflective structures on the conventional solar cells. By applying the designed optical thin films onto a commercial solar cell, we found the photocurrent of the solar cell was increased at all incident angles.
In the last, we studied the mechanisms of novel INC method, such as the influence of native oxide thicknesses on the distribution of the nanoclusters, the effect of thermal treatment on the distribution of the nanoclusters, and to enhance the detectivity of a schottky photodetector. Besides, we utilized the INC method to prepare textured structure on GaN substrates. And we have proved that the INC-assisted etching of GaN is practical as well. According to the photoluminescence (PL) measurement, we observed that these textured structures can enhance the light extraction efficiency on GaN surface, and the PL intensity can be increased by a factor of 1.72.

Reference ( 52 ) 〈TOP〉

1. Hylton, J. D.; Burgers, A. R.; Sinke, W. C., Alkaline etching for reflectance reduction in multicrystalline silicon solar cells. J Electrochem Soc 2004, 151 (6), G408-G427.
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2. Papet, P.; Nichiporuk, O.; Kaminski, A.; Rozier, Y.; Kraiem, J.; Lelievre, J. F.; Chaumartin, A.; Fave, A.; Lemiti, M., Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching. Sol Energ Mat Sol C 2006, 90 (15), 2319-2328.
連結：
3. Chang, Y. M.; Shieh, J.; Juang, J. Y., Subwavelength Antireflective Si Nanostructures Fabricated by Using the Self-Assembled Silver Metal-Nanomask. J Phys Chem C 2011, 115 (18), 8983-8987.
連結：
4. Sun, C. H.; Jiang, P.; Jiang, B., Broadband moth-eye antireflection coatings on silicon. Appl Phys Lett 2008, 92 (6).
連結：
5. Srivastava, S. K.; Kumar, D.; Singh, P. K.; Kar, M.; Kumar, V.; Husain, M., Excellent antireflection properties of vertical silicon nanowire arrays. Sol Energ Mat Sol C 2010, 94 (9), 1506-1511.
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