建構式應力運用於CMOS-MEMS共振器傳感間隙窄化技術

鄭洪森

doi:10.6342/NTU202203817

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College of Engineering > Graduate Institute of Applied Mechanics

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建構式應力運用於CMOS-MEMS共振器傳感間隙窄化技術

Gap Narrowing for CMOS-MEMS Resonators via Constructive Utilization of Structural Stress

鄭洪森 , Masters　　Advisor：李尉彰　　

繁體中文 DOI： 10.6342/NTU202203817

微機電；傳感間隙；動態阻抗；雙邊固定共振器；共振式開關； CMOS-MEMS ； transducer gap ； motional impedance ； clamped-clamped beam ； resoswitch

Abstract │ Reference (29)

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

This thesis presents a transducer gap-narrowing structure for resonators on 0.35-μm 2-poly-4-metal CMOS-MEMS platform. Particularly, an arc beam design releases the residual stress after wet etching and induce the deformation. The transducer electrode connected to the arc beam therefore moves toward the resonator and reduces the transducer gap spacing.
The arc beam structure features high freedom of optimizing the gap spacing through modifying arc beam dimensions and the initial gap spacing. The simplified mathematical model and finite element analysis both assist the prediction of final transducer gap which below the design rule defined gap of 500 nm. Narrowing the gap spacing to infinitesimal or even tapping resonator exactly is possible. Moreover, the gap-narrowing procedure includes only one wet etching process. Additional force or complicated post fabrication process are unnecessary.
This thesis practically uses the arc beam design on clamped-clamped beam (CC-beam) resonator and comb-driven resoswitch respectively. For CC-beam resonator, the arc beam electrode effectively reduces the transducer gap to 79.5 nm measured by SEM, and yields the motional impedance of 394.5 kΩ under DC bias of 3.6 V, about 157.4 times lower than 500 nm gap-spacing resonator of 62.1 MΩ. On the other hand, the resultant gap distance enhances the sensitivity of comb-driven resoswith and minimizes the actuate voltage by about 10 times, from 1.3 Vpp to 120 mVpp for hot switching under DC bias of 48.5 V.

Reference ( 29 ) 〈TOP〉

[1] A. S. Gillis. "What Is The Internet of Things (IoT)?" https://www.techtarget.com/iotagenda/definition/Internet-of-Things-IoT (accessed).
[2] A. S. Algamili et al., "A Review of Actuation and Sensing Mechanisms in Mems-Based Sensor Devices," Nanoscale research letters, vol. 16, no. 1, pp. 1-21, 2021.
[3] W.-C. Chen, W. Fang, and S.-S. Li, "A Generalized CMOS-MEMS Platform for Micromechanical Resonators Monolithically Integrated with Circuits," Journal of Micromechanics and Microengineering, vol. 21, no. 6, p. 065012, 2011.
[4] J. Zhu et al., "Development Trends and Perspectives of Future Sensors and MEMS/NEMS," Micromachines, vol. 11, no. 1, p. 7, 2019.
[5] G. M. Rebeiz, C. D. Patel, S. K. Han, C.-H. Ko, and K. M. Ho, "The Search for A Reliable Mems Switch," IEEE microwave magazine, vol. 14, no. 1, pp. 57-67, 2013.

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