DOI
stands for Digital Object Identifier
(
D
igital
O
bject
I
dentifier
)
,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link
「
https://doi.org/
」
before a DOI.
For instance, if the DOI of an article is
10.5297/ser.1201.002
, you can link persistently to the article by entering the following link in your browser:
https://doi.org/
10.5297/ser.1201.002
。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing a document with a DOI, the DOI permanent URL should always be presented (if using APA or Chicago format, present https://doi.org/DOI number). If using a citation format that does not specify DOI, the DOI permanent URL should still be presented as a priority.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration ( doi.airiti.com ) 。
The Carrier Transport Study of Group IV MOSFETs
藍偟翔 , Ph.D Advisor:劉致為
英文
DOI:
10.6342/NTU.2013.10967
應變 ; 鍺錫矽合金 ; 金氧半電晶體 ; 遷移率 ; 彈道電流 ; 經驗贗勢方法 ; Strain ; GeSnSi alloys ; MOSFETs ; Mobility ; Ballistic current ; Empirical pseudopotential method.


- References (chapter 1)
- [1] The website of Intel Corp: http://newsroom.intel.com/docs/DOC-2032
- [3] Jay Deep Sau and Marvin L. Cohen, “Possibility of increased mobility in Ge-Sn alloy system”, Phys. Rev. B, vol. 75 , pp.045208-1 (2007)
- [4] T. -H. Cheng, K.-L. Peng, C.-Y. Ko, C. -Y. Chen, H. -S. Lan, Y. -R. Wu, C. W. Liu and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition”, Appl. Phys. Lett., 96, 211108 (2010)
- [5] H.-Y. Yu, D. Kim, S. Ren, M. Kobayashi, D. A. B. Miller, Y. Nishi, and K. C. Saraswat, “Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si”, Appl. Phys. Lett., 95, 161106 (2009)