無序石墨烯之電傳輸特性

莊家翔

doi:10.6342/NTU.2015.02640

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無序石墨烯之電傳輸特性

Electronic properties of disordered graphene

莊家翔 , Ph.D　　Advisor：梁啟德　　

英文 DOI： 10.6342/NTU.2015.02640

石墨烯；無序性；氫化；量子點；量子霍爾效應；自旋電子學；量子漲落；量子霍爾相變；奈米；電性；傳輸； graphene ； disorder ； hydrogenated ； quantum dots ； quantum Hall effect ； spintronics ； quantum fluctuation ； Quantum Hall phase transition ； nano ； electronic ； transport

Abstract │ Reference (357) │ Altmetrics

Abstract 〈TOP〉

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In order to extend Moore’s law, two-dimensional graphene, which exists much better carrier mobility, high current density and great transport performance rather than silicon when the device is below 10 nm, is a promising candidate to replace silicon. For large-scale industrial productions, the imperfections inherent in graphene such as defects, disorder and impurities, are unavoidable factors during fabricating carbon-based semiconductor devices. Consequently, it is an important and immediate issue to further understand the fundamental transport physics in disordered graphene systems in order to realize graphene-based semiconductor devices for extending Moore’s law.

This thesis describes a series of experiments on carriers transport through disordered graphene systems – hydrogenated graphene in highly disordered property and multi-layer graphene in suitably disordered property, revealing different quantum transport behaviors in disordered graphene systems so as to pave the way towards novel graphene-based devices for extending Moore’s law.

The first experiment presents Efros-Shklovskii variable range hopping is the principal transport mechanism in the hydrogenated graphene system by using the modified resistance curve derivative analysis method in electric and magneto transport. Moreover, two-dimensional multi-quantum dots can be formed on hydrogenated graphene without executing post-exfoliation thermal annealing during carrying on hydrogen plasma exposure process. Therefore, two-dimensional states in highly disordered graphene are strongly localized and Coulomb interactions play key roles.

The second experiment shows a nearly temperature-independent point in the measured longitudinal resistivity ρ_xx, which is ascribed to the direct insulator-quantum Hall transition, in multi-layer graphene and magneto-conductance fluctuations in multi-layer and single-layer graphene. According to the experimental results on various two-dimensional materials, the direct insulator-quantum Hall transition observed in a graphene-based system strongly suggests that it is a universal effect in two-dimensional systems. Moreover, the low-temperature saturation of dephasing time in multi-layer graphene is one order of magnitude shorter than that in single-layer graphene, and the onset temperature of the low-temperature saturation of dephasing time in multi-layer graphene is lower than that in single-layer graphene, suggestive an uncommon effect in mescroscopic transport systems. We suggest that the multi-layer graphene not only provide suitably disordered property so as to enhance localized condition, but also provide some better transport channels by avoiding substrate impurities and molecules scattering, resulting in an uncommon phenomenon in mescroscopic systems.

The last experiment introduces the localization and heating effect in multi-layer graphene, revealing weak localization and universal conductance fluctuations effect coexisted and the linear relation was between current and carrier temperature in the multi-layer graphene system. The disagreement of the phase coherence lengths between weak localization and universal conductance fluctuations effect in the multi-layer graphene is possibly due to the existence of multi-layer graphene which enhances the disordered property so as to improve the localization condition. Moreover, the Dirac fermion temperature TDF is proportional to driving current I, which suggests α ~ 1. Therefore, there is little Dirac fermion-phonon scattering, a great advantage for applications in nano-electronics.

Reference ( 357 ) 〈TOP〉

Chapter 1
連結：
[1] G. E. Moore, Electronics 38, 114 (1965).
連結：
[2] G. E. Moore, Tech. Dig. – Int. Electron Devices Meet., 21, 11 (1975).
連結：
[3] The International Technology Roadmap for Semiconductors (http://public.itrs.net/)
連結：
[6] G. Tsutsui and T. Hiramoto, IEEE Transactions on Electron Devices 53, 2582 (2006).
連結：

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