以電漿電解氧化法於Ti/Si基材上製備鈦酸鋇膜及其特性研究

蔡汶榆

doi:10.6845/NCHU.2013.00406

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以電漿電解氧化法於Ti/Si基材上製備鈦酸鋇膜及其特性研究

Synthesis and characterization of barium titanate films on Ti/Si by plasma electrolytic oxidation

蔡汶榆 , Masters　　Advisor：呂福興　　

繁體中文 DOI： 10.6845/NCHU.2013.00406

電漿電解氧化法；鈦酸鋇；鈦膜； Plasma electrolytic oxidation ； barium titanate ； Ti/Si

Abstract │ Reference (72) │ Times Cited (3) │ Altmetrics

Abstract 〈TOP〉

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The objective of this work is to synthesize barium titanate (BaTiO3) films on Ti/Si substrate by plasma electrolytic oxidation. 0.5 M barium hydroxide was used as electrolyte at 70°C. The corrosion resistance and dielectric behavior of BaTiO3 films prepared with various voltages were discussed. Furthermore, synthesis of BaTiO3 films on bulk-Ti was conducted to explore the effect of substrates on the growth of BaTiO3. In addition, the results were also compared to those prepared on TiN/Si.
    The cubic BaTiO3 films were prepared on Ti/Si at voltages rangimg from 30 to 75 V. BaTiO3 films possessed uniformly distributed spherical-particulate surface morphology as the voltage was below 40 V, which was due to electrochemical oxidation. As the voltage was between 50 V and 55 V, a transion regime from the anodic oxidation to plasma electrolytic oxidation was observed. As the voltage increased up to 60 V, spark occurred during synthesis and acute oscillation of current curve, porous surface and thick BaTiO3 films were observed, which were characterizations of plasma electrolytic oxidation. The corrosion resistance and dielectric constant of BaTiO3 films prepared by plasma electrolytic oxidation is better and higher than those made by electrochemical oxidation. In addition, the bulk-Ti substrate was compared, the pore size of BaTiO3 films prepared on bulk-Ti is 2.5 times and average thickness growth rate is 9.8 times of BaTiO3 films made on Ti/Si. The smaller pore size of BaTiO3 films made corrosion rate of BaTiO3 films on Ti/Si is lower, while the pore size and impurity caused lower dielectric constant and loss of BaTiO3 films on Ti/Si. The results were also compared to those synthesized on TiN/Si by plasma electrolytic oxidation. It is found that the growth rate of BaTiO3 films prepared on TiN/Si is faster, which may be due to that the transition energy of titanium ions in TiN into BaTiO3 structure is lower. As for dielectric properties, the BaTiO3 films sythensied on Ti/Si were more dense, whcih made the dielectric constant of BaTiO3 films on Ti/Si is higher. 
    Base on above results, plasma electrolytic oxidation could reduce processing time and temperature in the synthesis of BaTiO3 films on Ti/Si, higher crystallinity of BaTiO3 films could also be made. The growth rate of BaTiO3 films prepared on Ti/Si by plasma electrolytic oxidation was slower than those synthesized on bulk-Ti and TiN/Si, but the corrosion resistance and dielectric properties is better than those made on bulk-Ti. Moreover, the obtained dielectric constant is higher than that synthesized on TiN/Si.

Reference ( 72 ) 〈TOP〉

3. J. Schreckenbach, F. Schlotting, G. Marx, W.M. Kriven, O.O. Popoola, M.H. Jilavi, and S.D. Brown, “Preparation and microstructure characterization of anodic spark deposited barium titanate conversion layers,” J. Mater. Res. 14 (1999) 1437.
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5. G.H. Heartling, “Ferroelectric thin films for electronic applications“, J. Vac. Sci. Technol. A 9 (1991) 414.
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6. V.P. Dravid, H. Zhang, L.A. Wills, and B.W. Wessels, “On the microstructure, and dielectric function of BaTiO3 MOCVD thin films,” J. Mater. Res. 9 (1994) 426.
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7. K. Suzuki, and K. Kijima, “Phase transformation of BaTiO3 nanoparticles synthesized by RF-plasma CVD,” J. Alloys Compd. 419 (2006) 234.
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8. B. Lee, and J. Zhang, “Preparation, structure evolution and dielectric properties of BaTiO3 thin films and powder by an aqueous sol-gel process,” Thin Solid Films 388 (2001) 107.
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