二維材料的精簡能帶模型與應用

黃義笙

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二維材料的精簡能帶模型與應用

Compact Band Model and its Application of Two Dimensional Material

黃義笙 , Masters　　Advisor：林立　　Co-advisor ：張書通

繁體中文

黑磷；二硫化鉬；能帶結構； ABC模型；緊束縛方法；有效質量近似；狀態密度； Black phosphorus ； Molybdenum disulfide ； Band structure ； ABC model ； Tight-binding method ； Effective mass approximation(EMA) ； Density of states

Abstract │ Reference (19)

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

The scaling of transistor can help improve the efficiency of transistors, which is the useful method in the semiconductor industry. However, there is not only one way to reduce the size of a transistor. Extra thin semiconductors used in the Ultra-Thin Body MOSFET (UTB FET) to greatly reduce the thickness of the semiconductor layer are two-dimensional materials. To understand the properties of two-dimensional materials, we can focus on its band structure. The band structure can tell us the properties of the material and be used for calculating various physical quantities.	In the point of view from the design of semiconductor devices, we can save time for selecting useful materials when the properties of this material are understood. The band structure calculation of material can be executed by first principle software (ab initio method). Merely with the type of material and the atomic structure, this first principle software can obtain band structure information through accurate but relatively complicated calculations. We can use Tight-binding method or Effective Mass Approximation (EMA) to quickly obtain energy band information if we only focus on lower energy region for band structure. We propose a new compact model, ABC model, to calculate two-dimensional materials. Recently, popular two-dimensional semiconductor materials, such as monolayer Black Phosphorus (BP) and monolayer molybdenum disulfide (MoS2) which is one kind of Transition Metal Dichalcogenides (TMD) materials. We adopt ABC model to fit band structure of above two dimensional materials from Tight-binding model and obtain an accurate band structure in the middle energy region. We also use ABC model to calculate physical quantities such as density of states, velocity square, and acoustic phonon scattering.

Reference ( 19 ) 〈TOP〉

[1] 蘇彥碩。2018。二維半導體材料之能帶結構與遷移率計算。國立中興大學碩士論文。
[2] Yoon, D. ; Cheong, H. In Raman Spectroscopy for Nanomaterials Characterization, Eds.:Kumar,C. S. ,Springer , Hesidelberg, 2012.
[3] Manzke, R.;Skibowski, M. In Electronic Structure of Solids: Photoemission Spectra and Related Data’ of Landolt ——Bömstein –Group III condensed Matter, Subvolume B, Vol. 23b, Eds.:Goldmann,A., Springer, Hesidelberg, 1994.
[4] Kück, S.; Madeiung, O.;Wertheit, H.;Rössler, U.; Schulz, M. In Electronic Structure of Solids: Photoemission Spectra and Relates Data’ of Landolt- Bömstein –Group III condensed Matter, Subvolume D, Vol. 41D, Springer, Hesidelberg, 2000.
[5] Chiang, T.; Himpsel, F. In Electronic Structure of Solids: Photoemission Spectra and Relates Data’ of Landolt- Bömstein –Group III condensed Matter, Subvolume A, Vol. 23a, Eds.:Goldmann,A.;Lpch, E.-E., Springer, Hesidelberg, 1989.

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