DOI
stands for Digital Object Identifier
(
D
igital
O
bject
I
dentifier
)
,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
「
http://dx.doi.org/
」
before a DOI.
For instance, if the DOI of an article is
10.5297/ser.1201.002
, you can link persistently to the article by entering the following link in your browser:
http://dx.doi.org/
10.5297/ser.1201.002
。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration ( doi.airiti.com ) 。
The Influence of Etch Parameters on Silicon Shallow Trench profile
唐維翎 , Masters Advisor:顏秀崗
繁體中文
半導體 ; 蝕刻 ; Semiconductor ; Etch ; Trench


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連結: - [2] Hyejin Shin, Kiho Yang, Jinyoung Choi, Jinsoo Kim, “The Analysis of Optical Lithography at 2-Dimensional Dense Structure ”, Proc. of SPIE Vol. 6924, 69244V, 2008.
連結: - [3] Dr. Kinam Kim , SAIT1, Samsung Electronics Co. , Yongin-City, Gyunggi-Do, Rep. of Korea , “From The Future Si Technology Perspective: Challenges and Opportunities” , IEEE , 0163-1918 , p1.1.1 - 1.1.9 , 2010.
連結: - [6] D.H. Kim et al., IEDM Tech. Dig., pp. 69-72, 2004.
連結: - [9] Hyunwoo Chung, Huijung Kim, Hyungi Kim, Kanguk Kim , “Novel 4F2 DRAM Cell with Vertical Pillar Transistor(VPT)” , IEEE , 1930-8876 , p 211 - 214 , 2011.
連結: