使用成長於矽基板之氮化鎵磊晶膜研製薄膜型發光二極體

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使用成長於矽基板之氮化鎵磊晶膜研製薄膜型發光二極體

Fabrication of thin-film LEDs using GaN-on-Si epilayers

楊閔皓 , Masters　　Advisor：武東星　　

繁體中文

矽基氮化鎵；發光二極體；基板移除技術；晶圓接合； GaN-on-silicon ； light-emitting diode ； silicon removal technique ； wafer bonding

Abstract │ Reference (37) │ Altmetrics

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In this thesis, thin-film blue light-emitting diodes (LEDs) using GaN-on-Si(111) epilayers were fabricated via wafer bonding and substrate removal processes. As compared to the common sapphire substrate, the Si substrate has better properties in electrical conductivity, thermal conductivity, and thermal stability. The substrate-free LEDs were expected to show a higher efficiency and better heat dissipation due to the improvement of current crowding issue. Moreover, the Ag/In bonding layer was also used to enhance the thermal dissipation, and hence reduce the degree of droop in LED efficiency. To understand the influence on LED performances, three kinds of LEDs were prepared in this study. They are named as the lateral LEDs (L-LEDs), secondary-transferred LEDs (S-LEDs), and vertical-structured LEDs (V-LEDs). At an injection current of 700 mA, the light output power of L-LEDs, S-LEDs and V-LEDs were 90.88, 155.87 and 261.07 mW, respectively. Obviously, the light output power of S-LEDs and V-LEDs were enhanced by 71.5 and 187.3 % compared to that of L-LEDs. The surface temperatures of L-LEDs, S-LEDs and V-LEDs were measured to be 90.72, 76.7, and 58.1 °C, respectively. The results clearly indicate that the good performance of LED devices can be achieved by using a thin-film device configuration.

Reference ( 37 ) 〈TOP〉

[1]T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen, J. K. Sheu, and J. F. Chen, "InGaN/GaN tunnel-injection blue light-emitting diodes," Electron Devices, IEEE Transactions on, vol. 49, pp. 1093-1095, 2002.
連結：
[2]J. Y. Zhang, W. J. Liu, M. Chen, X. L. Hu, X. Q. Lv, L. Y. Ying, B. P. Zhang, "Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique," Nanoscale Research Letters,vol.7, pp. 1-4, 2012.
連結：
[3]B. N. Aditya and N. Gupta, "Material selection methodology for gate dielectric material in metal-oxide-semiconductor devices," Materials & Design, vol. 35, pp. 696-700, Mar 2012.
連結：
[4]V. I. Gorbunkov and V. I. Solomonov, "Absorption and Emission Lines of a Mercury Molecule in a Mercury Discharge Lamp," Optics and Spectroscopy, vol. 105, pp. 699-704, Nov 2008.
連結：
[5]P. Wurfel, "Limits on light emission from silicon," Chinese Optics Letters, vol. 7, pp. 268-270, Apr 2009.
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