stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
-  W. P. Maszara, G. A. Rozgonyi, “Kinetics of damage production in silicon during self‐implantation”, Journal of Applied Physics, vol.60, 1986, pp.2310.
-  Phuong Nguyen, K. K. Bourdelle, T. Maurice, N. Sousbie, A. Boussagol, X. Hebras, L. Portigliatti, F. Letertre, A. Tauzin and N. Rochat, “The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon”, Journal of Applied Physics, vol.101, 2007, pp.033506.
-  Q.-Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, and T.-H. Lee, ” Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates”, Applied Physics Letters , vol.70, 1997, pp.1390.
-  A. Leiberich, D. M. Maher, R. V. Knoell, and W. L. Brown, “Ion-beam induced crystallization and amorphization at a crystalline/amorphous interface in <100> silicon”, Nuclear Instruments and Methods in Physics Research: B, vol.19/20, 1987, pp.457.
-  G. Nabert, H.-U. Habermeier, “Transmission electron microscopy investigation of the recrystallization of an amorphous layer in Si+‐implanted silicon”, Applied Physics Letters, vol.58, 1991, pp.1074.
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