鍍膜腔體電漿分佈特性研究

The Study for Plasma Distribution Characteristic of Coating Chamber

莊正安(Cheng-An, Chuang)

指導教授 ： 鄭鴻斌

國立臺北科技大學/機電學院/能源與冷凍空調工程系碩士班/碩士(2012年)

摘要

電漿輔助化學氣相沉積(Plasma Enhanced Chemical Vapor Deposition，PECVD）鍍膜製程為現今半導體產業中電子面板的重要製程之一，為了使生產效率提升，研究腔體內的電漿分佈，透過模擬分析，可以提供腔體設計與製程參數設定之參考依據。本研究以CFD-ACE+軟體進行熱流場及電漿分佈數值模擬分析，包含質量守恆式、動量守恆式、能量守恆式和泊松方程式，利用惰性氣體氬氣探討在不同參數及腔體零組件下之氬氣電漿分佈之情形。其結果顯示PECVD製程參數對平均電子密度及反應速率有極大的影響，製程參數以高工作壓力0.8Torr及低基座溫度373K有較高的平均電子密度及反應速率，流量的變化對其並沒有太大的影響；而腔體零組件的設計可以有效的提升薄膜均勻性，以入口邊緣處的擋板長度10cm和基座邊緣37.5mm內的基座溫度為373K可以使得較多的電漿落在基座邊緣，近而有較高反應速率及較好的薄膜均勻性，入口切割之流量分配對其並沒有太大的影響。為了講求效益，因以基座溫度變化為主，擋板為輔，以大幅提高產量及薄膜均勻性，降低生產成本，進而同時提升真空與鍍膜產業的競爭力。

關鍵字

鍍膜製程 ； 計算流體力學 ； 電漿輔助化學氣相沉積

並列摘要

The Plasma Enhanced Chemical Vapor Deposition (PECVD) is one of the important processes of electronic panel in the present semiconductor industry. In order to increase the production efficiency, this study discussed the plasma distribution in the chamber body, and conducted simulation analysis to provide reference frame for chamber body design and process parameter settings. This study used CFD-ACE+ software for numerical simulation analysis of heat flow field and plasma distribution, including mass conservation equation, momentum conservation equation, energy conservation equation and Poisson equation. It also used inert gas argon to discuss the argon plasma distribution for different parameters and chamber body components. The results showed that the PECVD process parameters had significant influences on the average electron density and reaction rate. The high working pressure 0.8Torr and low pedestal temperature 373K of process parameters had higher average electron density and reaction rate, and the variance in the flow had no significant influence. The design of chamber body components could improve the film uniformity effectively, and there was more plasma on the pedestal edge when the baffle on the edge of inlet was 10cm long and the pedestal temperature within 37.5mm to pedestal edge was 373K. Thus, there were higher reaction rate and better film uniformity, the inlet cut flow distribution had no significant influence. Considering the benefit, the pedestal temperature change should be considered first, and then the baffle, so as to improve the yield and film uniformity greatly, reduce the production costs, and enhance the competitive power of vacuum and coating industries.

並列關鍵字

Coating Process, ； Computational Fluid Dynamics ； PECVD

參考文獻

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