銀金屬化製程與鈦基薄膜擴散阻障層之技術開發研究

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銀金屬化製程與鈦基薄膜擴散阻障層之技術開發研究

Development of Silver Metallization Process and Ti-base Diffusion Barrier Layer Technology

何嘉偉 , Masters　　Advisor：鍾仁傑　　

繁體中文

金屬導線製程技術；電鍍銀；表面改質；接面電阻；熱穩定性； Metallization technology ； Silver electroplating ； Surface treatment ； Contact resistance ； Thermal stability

Abstract │ Reference (60) │ Altmetrics

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In this study, we investigated the silver metallization technology and feasibility of Ti-based diffusion barrier for Back-end-of-Line (BEOL) interconnect application.  To enlarge the electroplating process window, a single ALD-TiN film with bi-functional diffusion barrier and plating seed layer were proposed.  Surface modification of TiN film using plasma bombardment is believed to change the surface energy and bonding condition for better Ag wetting during plating.  The used plasma sources were selected from argon, hydrogen, oxygen and mixed argon with hydrogen gases.  The surface modification of titanium nitride films were examined by water-drop contact angle measurement.  We believed that plasma pre-treatment provide more nucleation sites and free electrons for silver reduction during electroplating process.  Better thermal stability behaviors of silver film directly plated on TiN film were also observed when pre-treatment using oxygen plasma and mixed argon/hydrogen plasma.  No agglomeration and micro voids were seen even annealed at 550oC for 30min.  
The electroplating Ag film properties including the crystallinity, surface morphology and electrical properties were characterized.  The best result showed the lowest silver film resistance was 3.19μΩ-cm when the condition of plasma pre-treatment was 100W for 30s. Silver/TiN/SiO2/Si stacked structures annealed at elevated temperatures was used to evaluate the barrier capability and no Ag signal was detected in SiO2 layer after 550oC annealing.  Depth profile analysis and junction leakage current measurement using n+/p-Si diode showed that the titanium nitride can effectively prevent silver diffusion.  Bottom-up Ag electroplating approach avoids the disadvantages, pinch-off, during plating process in damascene approach and can be used in 1X and beyond interconnect technology.

Reference ( 60 ) 〈TOP〉

[1] M.T. Bohr. Interconnect Scaling - The Real Limiter to High Performance ULSI. Proceedings of the IEEE International Electron Devices Meeting, 1995:241-244.
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[3] J. Li, H.S. Lu, Y.W. Wang, X.P. Qu. Sputtered Ru–Ti, Ru–N and Ru–Ti–N films as Cu diffusion barrier. Microelectronic Engineering. 2011;88(5):635–640.
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[5] C.W. Chen, J.S. Chen, and J.S. Jeng. Improvement on the Diffusion Barrier Performance of Reactively Sputtered Ru–N Film by Incorporation of Ta. Journal of The Electrochemical Society. 2008;155(6):H438-H442.
連結：
[6] S.H. Kwon, O.K. Kwon, J.S. Min, and S.W. Kang. Plasma-Enhanced Atomic Layer Deposition of Ru–TiN Thin Films for Copper Diffusion Barrier Metals. Journal of The Electrochemical Society. 2006;153(6):G578-G581.
連結：
[7] T. Watanabe, H. Nash, T. Usui, G. Minamihaba, A. Gawase, M. Shimada, Y. Yoshimizu, Y. Uozumi, and H. Shibata. Self-Formed Barrier Technology using CuMn Alloy Seed for Copper Dual-Damascene Interconnect with porous-SiOC/ porous-PAr Hybrid Dielectric. International Interconnect Technology Conference. 2007:7-9.
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