以射頻磁控濺鍍製備p型類鑽碳薄膜應用於太陽能電池

p-type amorphous carbon films prepared by radio frequency sputtering for the application of photovoltaic solar cells

邱怡嘉(Yi-Jia Chiou)

指導教授 ： 王錫福

國立臺北科技大學/工程學院/材料科學與工程研究所/碩士(2010年)

https://doi.org/10.6841/NTUT.2010.00325

摘要

本研究係利用射頻磁控濺鍍機來製備p型類鑽碳薄膜，利用碳-硼複合靶材，藉由控制硼-碳面積比控制不同硼含量，將薄膜沉積於矽基板上，形成的類鑽碳薄膜經由500℃退火並持溫十分鐘，利用霍爾效應量測其載子型態，可發現硼原子成功的摻雜至類鑽碳薄膜中變成p型類鑽碳薄膜，利用電子微探儀做硼元素之定量分析，拉曼觀察硼摻雜量與退火前後薄膜結構之差別；使用此p型類鑽碳薄膜製作p-DLC/n-Si異質接合型太陽能電池，並製作成不同電極結構做電池效率量測與比較。由研究中發現，硼含量為15.9at%，可得載子濃度為6×1016cm-3，載子遷移率為 100 cm2/V•s，電阻率約為 0.1 Ω-cm，利用此條件的p型類鑽碳薄膜製成Al/ITO/p-C/n-Si/Al 結構，可得最佳效率表現，所得開路電壓為0.43V，短路電流為22.02 mA/cm2，串聯電阻為8.81Ω，電池效率為3.41%。

關鍵字

非晶碳 ； 硼摻雜 ； 磁控濺鍍 ； 霍爾效應 ； 太陽能電池

並列摘要

A boron-doped amorphous carbon film was prepared by radio frequency (r.f.) magnetron sputtering method. The sputtering targets used were composed of boron pieces buried in a graphite disc. The boron-doped amorphous carbon films after annealed at 500 oC showed semiconductor behavior was the stable p-type conduction on the Hall-effect measurement. The p-type amorphous carbon film with a boron content of 15.9 at.% showed a carrier concentration of 6×1016 cm-3, a mobility of 100 cm2/V•s, and an conductivity of 0.1 Ω-cm. By using this p-type film, amorphous carbon heterojunction solar cell with the p-C/n-Si structure was fabricated. The cell photovoltaic characteristics were investigated as function of various electrode structures. The short-circuit current density (Jsc) and efficiency (η) increased from were 4.82 mA/cm2 and 0.25% for the conventional solar cell with an Al electrode layer to 22.02 mA/cm2 and 3.41% for the solar cell with an Al/ITO/p-C/n-Si/Al structure, respectively. The low series resistance (8.81 Ω) leads to a maximum power conversion efficiency of the Al/ITO/p-C/n-Si/Al structure solar cell.

並列關鍵字

amorphous carbon ； boron doping ； sputtering ； Hall effect, solar cell

參考文獻

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