局部電化學沉積微銅柱之製程電場模擬

本論文主旨在利用有限元素法模擬局部電化學沉積法之微銅柱沉積製程的幾何形狀變化。局部電化學沉積法所製作之微結構外觀形貌深受偏壓所產生之電場與沉積時的兩極間之間距所影響，本論文從建立一個模型分析局部電化學沉積製程，利用有限元素軟體ANSYS以不同的步進距離分析所產生的電場，再以電場分佈為基準，繪製出微銅柱成長過程之幾何外型，再與實驗結果做驗證。研究結果分為實驗與模擬，重要結果如下：(1)實驗顯現出用偏壓為3.0V，兩極間距為60μm、80μm有較好的沉積外型，兩極間距為20μm則需降低偏壓至2.8V。(2)兩極間距越長，偏壓越小，則沉積時間會漸漸上升，我們建立了一個ANSYS模型來說明此結果。(3)偏壓與兩極間距對於微銅柱柱徑的關係，我們使用了偏壓3V、2.8V與兩極間距20μm、40μm、60μm、80μm來說明結果。(4)ANSYS有限元模擬可以模擬出類似節狀的外貌結果，且會因為兩端電極間距加大而使節狀結構趨近於明顯，柱徑也會因兩極間距增大而增加。(5)模擬過程中需使用曲線擬合來改善有限元之節點分佈不均的問題。(6)分析網格取的大小也會影響模擬結果，太大會導致模擬結果失真，太小會因節點太過密集而出現錯誤。(7)模擬的外型會因不同的曲線擬合或不同精度的曲線擬合模擬而不同，但微銅柱的幾何特性會趨近相同。

關鍵字

局部電化學沉積；有限元素法；電場強度

並列摘要

The purpose of this study was to simulate the deposition process of Localized Electrochemical Deposition (LECD) in the fabrication of copper microcolumn using ANSYS. The geometrical configuration of the deposited microcolumn was mainly affected by the applied electric overpotential and the gap between the electrodes during the deposition. An updated finite element model using ANSYS in the simulation of the electric field distribution was employed to find the next configuration of the microcolumn grown on the cathode. The major tasks and findings are summarized as follows:(1)Experimental results showed at overpotential of 3.0V, the microcolumns deposited with the step gap of 60μm, 80μm had better cylindrical appearance. For step gap 20μm, the overpotential must be reduced to 2.8V. (2)The larger the gap distance was the longer the step deposition time became. The ANSYS model predicted the same trend as the experiment. (3)The influence of voltage bias and gap distance on the diameter of the deposited microcolumn was investigated with two different biases-2.8V and 3.0V,and four different gap distances 20, 40, 60, 80μm. (4)A hollow microculumn was simulated as the gap between the electrodes was small. As the gap became bigger, a solid microcolumn with dome-shaped end prevailed. (5) In the simulation process, the local irregularity in electric field distribution, and hence the contour of the cathode, could be corrected by using the curve-fitting techniques. (6) Either mesh with too fine or too coarse division could cause unsatisfactory simulated result. (7)The predicted configuration of the microcolumn the simulation was sensitive to the curve fitting scheme used in the simulation.

並列關鍵字

Localized Electrochemical Deposition ； Finite Element Analysis ； Electric Field Intensity

參考文獻

[18]楊仁泓，局部電化學沈積法之一維結構製程及機械性質量測，碩士論文，大葉大學機械與自動化工程學系，2004

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[2]R. A. Said, “Microfabrication by Localized Electrochemical Deposition Experimental Investigation and Theoretical Modelling,” Nanotechnology, 2003, pp.523-531

[3]J. D. Madden, and I. W. Hunter, “Three-Dimensional Microfabrication by Localized Electrochemical Deposition,” Journal of Microelectromechanical System, Vol. 5, No. 1, March 1996, pp.24-32

[4]E. M. El-Giar, U Cairo, and D. J. Thomson, “Localized Electrochemical Plating of Interconnectors for Microelectronics,” Proceedings of 1997 Conference on Communications, Power and Computing; Winnipeg, MB; May 22-23, 1997, pp.327-332

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局部電化學沉積微銅柱之製程電場模擬

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