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Search Symbol (Half-width) Description of Search Symbols
Space "AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " ) Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" : " image process "
? Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
* Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT

Boolean logic combinations of key words is a skill used to expand or refine search parameters.
(1) AND (1) AND: Refines search parameters
(2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

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DOI stands for Digital Object Identifier ( D igital O bject I dentifier ) ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」 「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registrationdoi.airiti.com ) 。

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Abstract 〈TOP〉
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Reference ( 20 ) 〈TOP〉
  1. [1]Igor Polishchuk, Y.C. Yeo, Q. Lu, T.J. King, and C. Hu “Hot-Carrier Reliability Comparison for pMOSFETs with Ultrathin Silicon-Nitride and Silicon-Oxide Gate Dielectrics,” IEEE Tran. Device and Material Reliability, vol. 1, pp. 158-162, 2001.
    連結:
  2. [2]T.-C. Ong, P.-K. Ko, and C. Hu, “Modeling of Substrate Current in pMOSFETs,” IEEE Electron Device Lett., vol. EDL-8, pp. 413, 1987.
    連結:
  3. [3]T.-C. Ong, P.-K. Ko, and C. Hu, “Hot-carrier Current Modeling and Device Degradation in Surface-channel pMOSFETs,” IEEE Trans. Electron Devices, vol. 37, pp. 1658–1666, 1990.
    連結:
  4. [4]T. Tsuchiya, Y. Okazaki, M. Miyake, and T. Kobayashi, “New Hot-carrier Degradation Mode and Lifetime Prediction Method in Quarter-micrometer PMOSFET,” IEEE Trans. Electron Devices, vol. 39, pp. 404–408, Feb. 1992.
    連結:
  5. [5]E. Li, E. Rosenbaum, L. F. Register, J. Tao and Fang, “Hot Carrier Induced Degradation in Deep Submicron MOSFETs at 100℃,” IRPS, pp. 103-106, 2000.
    連結:
Times Cited (1) 〈TOP〉
  1. 陳映璁(2007)。利用模擬分析具環形及淺摻雜汲極佈植之90 nm nMOSFETs的Ion / Ioff。臺北科技大學機電整合研究所學位論文。2007。1-91。 
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