MOSFET經HC應力後對PSP與BSIM4模型參數影響的分析

吳孟權

doi:10.6841/NTUT.2010.00622

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MOSFET經HC應力後對PSP與BSIM4模型參數影響的分析

Analysis of PSP and BSIM4 Model Parameters for MOSFETs with and without HC Stress

吳孟權 , Masters　　Advisor：陳雙源;黃恆盛　　

英文 DOI： 10.6841/NTUT.2010.00622

熱載子； PSP 模型； BSIM4模型； Hot-carrier ； PSP model ； BSIM4 model

Abstract │ Reference (21) │ Altmetrics

Abstract 〈TOP〉

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Hot carrier (HC) effect is a major reliability issue and has been studying these years. In traditional reliability analysis, most of researches focus on MOSFET after stress including threshold voltage shift, Id,linear degradation, Id,saturation degradation, interface states density, and lifetime prediction, etc. But there is little research discussing about the degradation from the viewpoint of MOSFET model parameters. The objective of our research is to analyze PSP and BSIM4 model parameters for MOSFETs with and without hot-carriers stress.
  In this research, the wafers are supplied from United Micro-electronics Corporation (UMC) and are made use of the reliability issues. The software Model Builder Program (MBP) of parameters extraction is supplied from Grand Technology Inc. (GTI). The study would be divided into the following parts. The first one is to introduce the procedure of parameters extraction by using MBP software on 65-nm-node MOSFETs with and without hot-carriers stress. Then, compare between initial and stressed MOSFET parameters by PSP model and BSIM4 model. Finally, the major parameters are compared between PSP and BSIM4 models.
  We observed that the degraded drain current and mobility of MOSFET after HC stress result in degraded model parameters extracted from MBP. From the result of parameter extraction, we observed that degraded drain current was not resulted from the whole components of the equation, while it was resulted from some components of the equation related to the parameters of inversion charge density (qim*), β(U0×W/L) and surface potential difference across the channel (ΔΨ). Through our research, we provide a new method to analyze the reliability from the viewpoint of MOSFET model parameters in addition to traditional reliability analysis. Furthermore, we could load the model card extracted from the degraded MOSFETs into HSPICE to execute circuit simulations (e.g. ring oscillator). It is helpful to verify the reliability test.

Reference ( 21 ) 〈TOP〉

[1-2] G. Angelov, T. Takov, S. Ristic, “MOSFET Models at the Edge of 100-nm Sizes,” Conference on Microelectronics (MIEL), VOL. 1, May, 2004
連結：
[1-3] A. J. Scholten, G. D. J. Smit, B. A. D. Vries, L. F. Tiemeijer, et al., “The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications,” IEEE J. Solid-State Circuits, VOL. 44, NO. 5, May, 2009, pp. 1415-1424
連結：
[2-1] A. B. Bhattacharyya, Compact MOSFET Models for VLSI Design, Singapore: WILEY, 2009
連結：
[2-4] G. Gildenblat, X. Li, W. Wu, H. Wang, et al., “PSP: An Advanced Sur-face-Potential-Based MOSFET Model for Circuit Simulation,” IEEE Trans. Elec-tron Devices, VOL. 53, NO. 9, Sep. 2006
連結：
[2-6] T. L. Chen and G. Gildenblat, “Symmetric bulk charge linearization in charge-sheet MOSFET model,” IEE Electronics Letters, VOL. 37, NO. 12, June, 2001.
連結：

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