鈀(磷)與純鈀金屬薄膜用於晶片接點之界面反應機構比較

林彥辰

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鈀(磷)與純鈀金屬薄膜用於晶片接點之界面反應機構比較

Comparative Study between Palladium-Phosphorus and Pure Palladium Thin Film in the Reaction between Tin-Silver-Copper Alloy and Gold/Palladium/Nickel Tri-Layer

林彥辰 , Masters　　Advisor：何政恩　　

繁體中文

化鎳鈀金；錫銀銅；鈀磷；純鈀；奈米級結晶的Ni2SnP ； nanocrystalline Ni2SnP ； ENEPIG ； Sn-Ag-Cu ； Pd-P ； pure Pd

Abstract │ Reference (61) │ Altmetrics

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

Recently, the Pd (or Pd-P) film had been deposited over the Ni(P)metallization pads for high-end packaging applications. This was because an adequate Pd layer can prevent the Ni(P) from the galvanic attack derived
from the immersion Au plating process; thus a hyper-corrosion in the Ni(P)(generally termed as “black pad”) was avoided. The different Pd film, whether it contained the phosphorus or not, was deposited by using the
various reducing agent. This study established the mechanism of Ni2SnP growth from the Pd(P) thin film and provided a comparison Pd(P) and pure(P) on reactions during aging reaction with the Sn-3Ag-0.5Cu alloy.
Reaction mechanism between liquid Sn-3Ag-0.5Cu solder and solid Au/Pd(P)/electrolytic-Ni films was examined using field-emission transmission electron microscope (FE-TEM) at different exposure times (15−600 s). After 15 s of exposure, the uppermost layer of Au was removed from the interface, and a portion of the Pd(P) film remained. At this stage of the reaction, the predominant products were PdSn3 and Pd3P.After 30 s of exposure, Pd(P) was completely exhausted, and four additional intermetallic species, including Pd-Sn-P, Pd15P2, and Pd6P,nucleated. After 120 s of exposure, the aforementioned species were destroyed, and Cu and Ni were involved in the reaction. The Pd existed
primarily in the form of PdSn4 and was dispersed in the solder adjacent to the interface. The predominant product became (Cu,Ni)6Sn5, and the nucleation of a nanocrystalline Ni2SnP layer in the midst of (Cu,Ni)6Sn5 was observed. These results suggest that Pd and P play a vital role in the
soldering reaction, even though the Pd(P) film is only a few submicrons (thickness) and its P content is quite low (2–5 %). Furthermore, in the Comparative Study between Pd(P) and pure Pd thin film, the different result of interfacial reaction between this two cases was one addition layer of (Ni,Cu)3Sn4 form between (Cu,Ni)6Sn5 and Ni(P) in the pure Pd case after aging at 180 °C for 500 h. Furthermore, mechanical response of the bonding interfaces of the two various film structures (i.e., pure Pd and Pd-P)
was evaluated through a high-speed-ball shear (HSBS) test. In contrast with the result of interfacial reaction, the marked Ni2SnP formed at the interface in the Pd(P) case. Ni2SnP layer acted as a diffusion barrier to Ni from the Ni(P) layer during the aging reaction and had significant
influences to retard the formation of (Ni,Cu)3Sn4.

Reference ( 61 ) 〈TOP〉

[1] K. N. Tu, Microelectronics Reliability, 51, p.518, 2011.
連結：
[13] F. D. B. Houghton, Circuit World, 26, p.10. 2000.
連結：
[22] 林勝偉碩士論文，元智大學化學工程與材料科學學系研究所，2010
連結：
[24] K. Hasegawa, Hitachi Chemical Co., Ltd.
連結：
[26] S. P. Peng, W. H. Wu, C. E. Ho, Y. M. Huang, Journal of Alloys and Compounds, 493, p.431, 2010.
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