Bi-Sb-Te/Te複合濺鍍薄膜熱電性質與微結構之研究

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Bi-Sb-Te/Te複合濺鍍薄膜熱電性質與微結構之研究

Thermoelectric Properties and Microstructure of Sputtered Bi-Sb-Te/Te Multilayered Thin Films

朱菀翎 , Masters　　Advisor：廖建能　　

英文

熱電材料；碲化鉍；多層膜結構； thermoelectric materials ； bismuth telluride ； multilayer structure

Abstract │ Reference (31) │ Altmetrics

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Bismuth telluride-based compounds have superior thermoelectric properties at room temperature regime. The thermoelectric thin films deposited at room temperature usually have many crystal defect.  A post thermal treatment is required to eliminate the defects and improve the thermoelectric properties of the thermoelectric thin films. However, Te atoms have high vapor pressure and easily to evaporate during the annealing process, resulting in the variation of composition. In this study, a Bi0.4Sb1.6Te3/Te multilayered structure has been deposited on a polyimide substrate by RF/DC magnetron sputtering. The extra Te layers inserted in between the Bi0.4Sb1.6Te3 films is used to compensate the Te loss during thermal annealing. First, the effects of sputtering parameters and polyimide substrate on the characteristics of Bi0.4Sb1.6Te3 were investigated. The results show that a high process pressure reduces the deposition rate of the Bi0.4Sb1.6Te3 thin film. The composition will vary by changing the sputtering power due to different elemental sputter yield. Moreover, the polyimide substrate of high coefficient of thermal expansion possesses a high tensile thermal stress at annealing temperature and is susceptible to the formation of micro voids in the Bi0.4Sb1.6Te3 thin films.  As for the microstructure and thermoelectric properties, we observed that some Sb-rich phases precipitate at the film surface after the specimen annealed at the temperature higher than 350 C.  Interestingly, the Bi0.4Sb1.6Te3/Te films exhibits less and smaller Sb-rich precipitates than the Bi0.4Sb1.6Te3 films.  The Bi0.4Sb1.6Te3/Te films were found to have a higher carrier concentration, a lower electrical resistivity and better crystallinity than the Bi0.4Sb1.6Te3 films. The discrepancy appears to increase with the increasing number of Te layers in the sample. It is suggested that the excess Te layers in the Bi0.4Sb1.6Te3/Te films are able to compensate the Te loss and suppress the formation of Te vacancies VTe during the high temperature annealing.  A high thermoelectric power factor of 9.2×10-3 W/mK2 is obtained for the Bi0.4Sb1.6Te3/Te samples with 15 Te intersection layers after annealed at 400 C.

Reference ( 31 ) 〈TOP〉

[4] 沈孜璨，循環拉伸應力與電流輔助熱退火對可撓式基板上碲化鉍系薄膜微結構與熱電性質影響之研究，國立清華大學(2015).
連結：
[10] X. A. Fan, J. Y. Yang, R. G. Chen, H. S. Yun, W. Zhu, S. Q. Bao, X. K. Duan, Journal of Physics D-Applied Physics 39, 740 (2006).
連結：
[18] W. Glatz, E. Schwyter, L. Durrer, C. Hierold, Journal of Microelectromechanical Systems 3, 18 (2009).
連結：
[23] 張志宇，經電流輔助退火處理之Bi0.5Sb1.5Te3/Sb多層濺鍍薄膜熱電性質研究，國立清華大學 (2010).
連結：
[24] National Physical Laboratory (http://www.npl.co.uk/science-technology/surface-and-nanoanalysis/services/sputter-yield-values).
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