具垂直異向性的鈷鐵硼/氧化鎂之高熱穩定性結構研究

蔡弘益

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具垂直異向性的鈷鐵硼/氧化鎂之高熱穩定性結構研究

Perpendicular-anisotropy CoFeB/MgO free layer with high thermal stability structure

蔡弘益 , Masters　　Advisor：賴志煌　　

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熱穩定性；鈷鐵硼；氧化鎂；臨界翻轉電流密度； thermal stability ； CoFeB ； MgO ； threshold switching current density

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This work has been focused on the deposition of perpendicular-anisotropy CoFeB/MgO free layer, measurement of thermal stability in different size devices, and the experimental setup of measuring thermal stability. Moreover, develop a new double CoFeB structure with higher thermal stability. Then, evaluate the effective field when a current passed and the threshold switching current density.
    In the single CoFeB layer, I have tuned the thickness of CoFeB and the condition of annealing to get the better perpendicular anisotropy. After that, I have tuned the thickness of bottom CoFeB and sputter condition to get a double CoFeB structure with higher MS*t and a constant HK value.           
    In order to fabricate different size devices, I have used photolithography and E-beam lithography to pattern the Hall cross structure. I would like to use the Hall voltage which had been measured by AHE to investigate the properties of small-sized devices.
    I mainly used pulse magnetic switching probability and dynamic coercivity method to measure the thermal stability of micro-sized and nano-sized devices. In the last part, I would like to compare the effective field and threshold switching current density between single CoFeB and double CoFeB structure.

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[2] M. Julliere, Physics Letter A54, 225(1975)
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[3] S. Yuasa, et al, Nat. Mater. 3 868(2004)
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[4] S. S. P. Parkin, et al, Nat. Mater, 3 862(2004)
連結：
[5] J. C. Slonczewski, Phys. Rev. B 39 6995(1989)
連結：
[6] S Yuasa, et al, J Phys. D: Appl. Phys. 40(2007)R337-R354
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