DOI
stands for Digital Object Identifier
（
D
igital
O
bject
I
dentifier
）
,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
「
http://dx.doi.org/
」
before a DOI.
For instance, if the DOI of an article is
10.5297/ser.1201.002
, you can link persistently to the article by entering the following link in your browser:
http://dx.doi.org/
10.5297/ser.1201.002
。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
Export
Track
Add to Cart
E-mail To Friend
Print Bibliography
Report an Issue
Purchase Single Articles
Download PDF
Complementary resistive switches based on ZnO memristive devices
張浩翔 , Masters Advisor：甘炯耀
繁體中文
DOI：
10.6843/NTHU.2012.00347
- 1. Valov, I., et al., Electrochemical metallization memories-fundamentals, applications, prospects. Nanotechnology, 2011. 22(25).
連結：
- 2. Linn, E., et al., Complementary resistive switches for passive nanocrossbar memories. Nature Materials, 2010. 9(5): p. 403-406.
連結： - 3. Rosezin, R., et al., Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays. Ieee Electron Device Letters, 2011. 32(2): p. 191-193.
連結： - 4. Lee, M.J., et al., A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures. Nature Materials, 2011. 10(8): p. 625-630.
連結： - 5. Schindler, C., et al., Bipolar and unipolar resistive switching in Cu-doped SiO2. Ieee Transactions on Electron Devices, 2007. 54(10): p. 2762-2768.
連結：
