以蠶絲蛋白為介電層的TIPS Pentacene有機薄膜電晶體元件特性

Characteristics of TIPS Pentacene based organic thin film transistors with silk fibroin as the gate dielectric

謝佩涓(Pei-Chuan Hsieh)

指導教授 ： 黃振昌

國立清華大學/工學院/材料科學工程學系/碩士(2013年)

摘要

本論文利用p型有機半導體分子6,13-Bis(triisopropylsilylethynyl) pentacene又簡稱TIPS pentacene作為主動層，搭配甲苯為TIPS pentacene的溶劑，並利用具有高介電常數(k=6.1)的蠶絲蛋白當作閘極介電層(gate dielectrics)，來製作溶液製程有機薄膜電晶體 (organic thin film transistor, OTFT)。利用一般的旋轉塗佈法，其載子遷移率約為4.4 x 10-3 cm2V-1s-1。
研究結果顯示，利用溶液製程刮刀塗佈法與基板50o C加熱溫度因大面積塗佈與溶劑揮發速率恰當可獲得最均勻的半導體薄膜，因施予一定溫度提供熱能有助於半導體成膜，若再搭配溫度梯度加熱成膜法，藉由溫度差異使溶劑揮發具方向性，可幫助TIPS pentacene分子方向性結晶排列，其中利用與載子通道平行的結晶方向加熱法可以有效地將其載子遷移率提升至0.30 cm2V-1s-1，將元件特性提升將近百倍以上，故可以得到最佳的有機薄膜電晶體元件特性。

關鍵字

溶液製程 ； 可溶性五苯環衍生物 ； 有機薄膜電晶體

並列摘要

In this thesis, we used 6,13-Bis(triisopropylsilylethynyl)pentacene, also known as TIPS pentacene, as the active layer and chose toluene as the solvent of soluble semiconductor materials to fabricate organic thin film transistors (OTFTs). TIPS pentacene is p-type soluble organic semiconductor molecule. Silk fibroin is a high  material, which serves as gate dielectric for the solution processed OTFTs. In the regular process, the TIPS pentacene is formed on silk fibroin by spin-coating. The field-effect mobility of TIPS pentacene OTFTs is 4.4 x 10-3 cm2V-1s-1.
The blade coating method with 50o C heating was also used to fabrication TIPS pentacene thin film. An uniform TIPS pentacene thin film of good quality was achieved because of the large area capability and the appropriate evaporation rate. If additional temperature thermal gradient is applied during casting, TIPS pentacene is crystalized along the thermal gradient direction. The field-effect mobility increases to 0.30 cm2V-1s-1. when the directional crystallization of TIPS pentacene is along the channel direction.

並列關鍵字

solution process ； TIPS pentacene ； OTFTs

參考文獻

[39] 蔡正倫, 以蠶絲蛋白為閘極介電層的N型有機薄膜電晶體製備, 2012.

[41] 巫宗祐, 介電層表面官能化對紅螢烯薄膜成長與其電晶體效能之影響, 2011

[40] 蘇敬文, 有機薄膜電晶體全溶液製程開發與介面特性之研究, 2011

[23] Reid J. Chesterfield, John C. McKeen, Christopher R. Newman, J. Phys. Chem. 2004, 108, 19281-19292.

[11] Jana Zaumseil, Henning Sirringhaus, Chem. Rev. 2007, 107, 1296−1323.