鎳/氧化鎳單晶奈米線的合成研究與電阻性記憶體之應用

蕭翔文

doi:10.6843/NTHU.2013.00499

3.227.208.0，Hello！

Close
Search Quick Search Advanced Search Publication Search	Personal Service Member Login Searching History Use Bonus Card SYMSKAN
Browse Browse by University of Graduate Thesis Browse by Pinyin of Graduate Thesis Browse by Conference Proceedings Topic Browse by Conference Proceedings Publisher Browse by Pinyin of Conference Proceedings Browse by eBook Category Browse by eBook Topic Browse by eBook Publisher
Customer Services Authorize Airiti Recommend a Journal

Search Symbol (Half-width)	Description of Search Symbols
Space	"AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " )	Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" ： " image process "
?	Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
*	Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT	Boolean logic combinations of key words is a skill used to expand or refine search parameters. (1) AND (1) AND: Refines search parameters (2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

DOI stands for Digital Object Identifier （ D igital O bject I dentifier ） ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ）。

Data Source

College of Engineering > Department of Materials Science and Engineering
Engineering > General Engineering

Bibliography Management Tool

Related Links

Report an Issue

Purchase Single Articles

Download PDF

鎳/氧化鎳單晶奈米線的合成研究與電阻性記憶體之應用

Synthesis of Single Crystal Ni/NiO Core-Shell Nanowires and its Application at Resistive Switching Memory

蕭翔文 , Masters　　Advisor：周立人;闕郁倫;謝光前　　

英文 DOI： 10.6843/NTHU.2013.00499

鎳/氧化鎳；電阻性記憶體； Ni/NiO Core-Shell Nanowires ； RRAM

Abstract │ Reference (64) │ Altmetrics

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

Because RRAM has many advantages such as low cost, low power, fast programming speed (twr < 100 ns), simple structure, shrinkage of cell size and nondestructive operation, it has attracted much attention for many researchers. Besides, in order to decrease the cell area and raise the density, nanowires were used to replace the thin film materials. In the literature, they usually synthesize the Ni nanowires and then oxidize the nanowires to form Ni/NiO core-shell structures. In our research, we report the growth and structural characterization of the core-shell Ni/NiO nanowires in one step. In addition, the electrical and resistance switching properties were also investigated. 
The Ni/NiO core-shell nanowires were synthesized by NiCl2 sources on Si substrates at 800 ℃ in source region (I) and 700 ℃ in substrate region (II) under Ar carrier gas in two-region furnace via oxide-assisted growth (OAG) mechanism. Due to the OAG mechanism, the SiO2 layer was formed outside of Ni/NiO core-shell nanowires. Then, we used HF vapor to etch away the SiO2. By different reaction temperature and flow gas, we can control the diameters and length of the nanowires. The crystal structure, morphology and chemical composition were analyzed by scanning electron microscope (SEM) and transmission electron microscope (TEM). Besides, due to fabrication of nanodevice, we use the optical microscope (OM) and a series of standard electron beam lithography (EBL).
Finally, we used the Keithley 4200 to measure the I-V curve and resistive switching behaviors of core-shell Ni/NiO nanowires. Also, we designed different electrode distances of nanodevices to investigate the possible conduction path. First, different resistive switching modes such as unipolar or bipolar switching mode were observed in different electrodes, nickel and titanium. Secondly, the endurance of the Ni/NiO core-shell nanowires can be modified and the cycle number can be over 100. Finally, because the resistive switching current could be operated at micro amp (A) and lower power, the Ni/NiO core-shell nanowires have potential to become energy efficient random access memory (ReRAM).

Reference ( 64 ) 〈TOP〉

[1.1] P.Alivisators,“Semiconductor Clusters Nanocrystals, and Quantum Dots”, Science ,271, (1999), pp.933-934
連結：
[1.2] J.M.Krans, J.M.van Rultenbeek, V.V.Fisun, I.K.Yanson, and L.J.de.Jongh,“The Signature of Conductance Quantization in Metallic Point Contacts”, Nature, 375, (1995), pp.767-769
連結：
[1.3] D.K.Sarkar, D.Brassard, and M.A.El Khakani,“Single-Electron Tunneling at Room Temperature in TixSi1-xO2 Nanocomposite Thin Films ”, Appl.Phys.Lett., 87, (2005), pp253108-253110
連結：
[1.5] E.Leobandung, L.Guo, Y.Wang, and S.Y.Chou,“Quantum Effects and Coulomb Blockade in Silicon Quantum-Dot Transistors at Temperature over 1000K”, Appl.Phys.Lett., 67, (1995), pp938-940
連結：
[1.6] J.A.McCleverty and T.J.Meyer,“Comprehensive Coordination Chemistry Ⅱ：form Biology to Nanotechnology”, Elsevier Pergamon Boston, (2004)
連結：

Altmetrics

〈TOP〉

E-mail ：

When an article is available to download, a notice will be sent to your mailbox address.

E-mail ：