自組裝磊晶金屬矽化物與鍺化物奈米線之研究

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自組裝磊晶金屬矽化物與鍺化物奈米線之研究

Growth of Self-Assembled Epitaxial Metal Silicide and Germanide Nanowires

李汶珊 , Ph.D　　Advisor：陳力俊　　

英文

金屬矽化物；金屬鍺化物；奈米線； Metal Silicide ； Metal Germanide ； Nanowires

Abstract │ Reference (98) │ Altmetrics

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In this thesis, self-assembled epitaxial Co1-xNixSi2 and nickel germanide nanowires are fabricated by reactive deposition epitaxy technique.
Self-assembled epitaxial Co1-xNixSi2 nanowires are formed on thin-oxide-capped (001)Si substrates. The thin native oxide layer can promote the growth of nanowires. The epitaxial relationships between nanowires and substrates and the elemental distributions of Ni and Co in nanowires are analyzed, and the formation process of nanowires is discussed.
Self-assembled epitaxial nickel germanide nanowires are formed on Ge substrates. They grow parallel to the <110>Ge directions and have high aspect ratios on (110)Ge. The native germanium oxide layer can be removed by degassing and flashing in the ultrahigh vacuum chamber before the reactive deposition epitaxy process. This procedure can lower the formation temperature of nickel germanide nanowires and improve their morphology. Two-probe current-voltage measurements of the nickel germanide nanowires exhibit the low resistivity and high maximum current density.

Reference ( 98 ) 〈TOP〉

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3. V. Balzani, A. Credi, and M. Venturi, The Bottom-Up Approach to Molecular-Level Devices and Machines, Chem. Eur. J. 8, 5524-5532 (2002).
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4. G. M. Whitesides and B. Grzybowski, Self-Assembly at All Scales, Science 295, 2418-2421 (2002).
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5. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species, Science 293, 1289-1292 (2001).
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6. J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, and C. M. Lieber, Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires, Science 293, 1455-1457 (2001).
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