圖案化透明導電基板之撓曲負載研究

曾國睿

54.236.62.49，Hello！

Close
Search Quick Search Advanced Search Publication Search	Personal Service Member Login Searching History Use Bonus Card SYMSKAN
Browse Browse by University of Graduate Thesis Browse by Pinyin of Graduate Thesis Browse by Conference Proceedings Topic Browse by Conference Proceedings Publisher Browse by Pinyin of Conference Proceedings Browse by eBook Category Browse by eBook Topic Browse by eBook Publisher
Customer Services Authorize Airiti Recommend a Journal

Search Symbol (Half-width)	Description of Search Symbols
Space	"AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " )	Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" ： " image process "
?	Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
*	Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT	Boolean logic combinations of key words is a skill used to expand or refine search parameters. (1) AND (1) AND: Refines search parameters (2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

DOI stands for Digital Object Identifier （ D igital O bject I dentifier ） ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ）。

Data Source

College of Engineering > Graduate Institute of Mechanical Engineering
Engineering > Mechanical Engineering

Bibliography Management Tool

Related Links

Report an Issue

Search in Library

Full-Text will be available on 2021/08/02 Authorization notice of subscription

圖案化透明導電基板之撓曲負載研究

Flexural Load Research of Patterned Transparent Conductive Substrate

曾國睿 , Masters　　Advisor：李昌駿　　

繁體中文

透明導電薄膜；圖案化氧化銦錫；有限元素法；撓曲負載； Transparent Conductive Film ； Patterned Indium Tin Oxide ； Finite Element Method ； Flexural Load

Abstract │ Reference (36) │ Altmetrics

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

The rapid development of mobile and wearable devices, flat display device, touch panel and other devices are highly flexible requirement. Thus, the flexible display technology to become the next generation flat panel display technology. For flexible technology, flexible transparent conductive film is one of the most important material. Indium tin oxide is the most widely used transparent conductive film. Multi-layer stack film formed of a soft substrate and indium tin oxide which is a certain extent been a flexural loading, indium tin oxide because of the nature of the ceramic is destroyed, causing function failure. Mechanical point of view, the multilayer stack film of its soft substrate thickness, and a patterned indium tin oxide on the practical application of its pattern width, for indium tin oxide film destruction flexural load, play an important factor.
This study cooperation with JTOUCH Corporation, obtained commercially available flexible transparent conductive film specimen with patterned indium tin oxide, having two different patterns, width is 3.92mm and 0.37mm; and three steps of thickness, respectively 50μm, 100μm and 125μm. Flexural loading experiment at different radius of curvature, and measuring resistance value variations. Results showed the same thickness of the substrate specimen is patterned width of 3.92mm smaller resistance changes；the same pattern as specimen substrate thickness of 50μm which resistance change smaller than 100μm. And using finite element method to simplify the structure of specimen, simulated flexural load and strain relations at different radius of curvature. Simulation results show that the pattern width of the specimen wider, substrate thickness of the specimen thinner, flexural load strain values are lower. In addition, the smallest change in the resistance of specimen is pattern width 3.92mm, substrate thickness 50μm, when the flexural load radius of curvature less than 4mm, the change in resistance suddenly increased. The simulation results are obtained under the same conditions in the radius of curvature is less than 4mm, strain exceed the relevant literature on the indium tin oxide film fracture strain of approximately 1.1%.
The results compared with the simulation results and found that a flexural load at different radius of curvature which resistance changes and strain is highly correlated. It can be used to simulate the way parameter adjustment pattern width and thickness of the substrate, reached using indium tin oxide film of the flexible device optimized design.

Reference ( 36 ) 〈TOP〉

[1] K. A. Sierros, N. J. Morris, K. Ramji and D.R. cairns, “Stress–corrosion cracking of indium tin oxide coated polyethylene terephthalate for flexible optoelectronic devices”, Thin solid films., Vol. 517, no. 8, pp. 2590-2595, Feb. 2009.
連結：
[2] H. Machinaga, E. Ueda, A. Mizuike, Y. Takeda, K. Shimokita and T. Miyazaki, “Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate”, Thin solid films., Vol. 559, no.1, pp. 36-39, May 2014.
連結：
[3] V. Vasu and A. Subrahmanyam, “Photovoltaic properties of spray pyrolytic grown indium tin oxide (ITO)/silicon junctions-dependence on substrate temperature”, Semicond. sci. technol., Vol. 7, no. 12, pp. 1471-1475, Dec. 1992.
連結：
[4] C. Coutal, A. Azéma and J. C. Roustan, “Fabrication and characterization of ITO thin films deposited by excimer laser evaporation”, Thin solid films., Vol.288, no. 1, pp. 248-253, Nov. 1996.
連結：
[5] J. Ma, D. Zhang, J. Zhao, C. Tan, T. Yang and H. Ma, “Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature”, Appl. surf. sci., Vol. 151, no. 3. pp. 239-243, Oct. 1999.
連結：

Altmetrics

〈TOP〉

E-mail ：

When an article is available to download, a notice will be sent to your mailbox address.

E-mail ：