以迴旋濺鍍法成長氮化鋁薄膜之機制探討

宋增滄

doi:10.6840/cycu200300100

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以迴旋濺鍍法成長氮化鋁薄膜之機制探討

The Discussion of AlN Thin Film Growth Mechanism by Helicon Sputtering Method

宋增滄 , Masters　　Advisor：高慧玲　　

繁體中文 DOI： 10.6840/cycu200300100

氮化鋁；低壓成長；迴旋濺鍍系統； low pressure ； AlN ； Helicon sputter

Abstract │ Reference (51) │ Times Cited (4) │ Altmetrics

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Abstract
Aluminum Nitride(AlN) films are highly attractive due to their excellent piezoelectricity, high surface acoustic wave velocity, large energy gap and good temperature stability. It has been a good choice to develop AlN high frequency acoustic wave devices as well as GaN-base MIS-FET with AlN as dielectrics. In addition, since AlN has been the buffer layer between GaN and Sapphire for optoelectronics, to decrease the cost of process and the defects of materials and to integrate photoelectric and electric devices, AlN may be able to play the role of buffer layer for the growth of GaN on Si.
The aim of this thesis is to deposit highly quality (002)AlN films on SiO2/Si(100) 、Si(111) and GaN/Sapphire substrates using Helicon sputtering, to accomplish the above mention application. The Helicon Sputtering System is a magnetron sputter system enhanced with an inductivity coupled rf plasma, in which the plasma can be sustained in a gas atmosphere of 10-4Torr. Since the mean free path of the atoms can be increased, using this “MBE like” sputtering process can produce a smooth surface.
Highly textured smooth (002)AlN films have been successfully deposited on SiO2/Si(100) 、Si(111) and GaN/Sapphire substrates in  low-pressure(1mTorr) of Helicon sputtering system. The FWHM of (002)AlN films are 2.55∘、2.3156∘and 0.9102∘,and the R.M.S. roughness  are 9.23Å、4.75Å and 8.79Å, respectively. The deposition process as well as the model of growth mechanism are established and discussed.
Keywords: AlN, Helicon sputter, low pressure

Reference ( 51 ) 〈TOP〉

1. James R. Phillips. Sr. Member of Technical Staff. CTS Wireless Components,“PIEZOELECTRIC TECHNOLOGY PRIMER”, 4800 Alameda Blvd. N. E. Albuquerque, New Mexico 87113
連結：
3. R. M. White, and F. W. Voltmer,“Direct piezoelectric coupling to surface elastic waves”, Appl. Phys. Lett. 7, pp. 314-316, 1965.
連結：
4. S.M. Hubbard , D. Pavlidis, V. Valiaev , M.A. Stevens-Kalceff , I.M. Tiginyanu, “Electrical characterization and cathodoluminescence microanalysis
連結：
6. E. Alckseev, A. Eiscnbach and D. Pavlidis, “Low interface state density AlN/GaN MISFETs”, ELECTRONICS LETTERS, Vol 35, NO. 24 20th November 1999.
連結：
7. A.M. Sanchez, F.J. Pacheco, S.I. Molina, “AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)”, Materials Science and Engineering, B93, pp 181-185, 2002.
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