DOI
stands for Digital Object Identifier
(
D
igital
O
bject
I
dentifier
)
,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
「
http://dx.doi.org/
」
before a DOI.
For instance, if the DOI of an article is
10.5297/ser.1201.002
, you can link persistently to the article by entering the following link in your browser:
http://dx.doi.org/
10.5297/ser.1201.002
。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration ( doi.airiti.com ) 。
The Discussion of AlN Thin Film Growth Mechanism by Helicon Sputtering Method
宋增滄 , Masters Advisor:高慧玲
繁體中文
DOI:
10.6840/cycu200300100
氮化鋁 ; 低壓成長 ; 迴旋濺鍍系統 ; low pressure ; AlN ; Helicon sputter


- 1. James R. Phillips. Sr. Member of Technical Staff. CTS Wireless Components,“PIEZOELECTRIC TECHNOLOGY PRIMER”, 4800 Alameda Blvd. N. E. Albuquerque, New Mexico 87113
連結: - 3. R. M. White, and F. W. Voltmer,“Direct piezoelectric coupling to surface elastic waves”, Appl. Phys. Lett. 7, pp. 314-316, 1965.
連結: - 4. S.M. Hubbard , D. Pavlidis, V. Valiaev , M.A. Stevens-Kalceff , I.M. Tiginyanu, “Electrical characterization and cathodoluminescence microanalysis
連結: - 6. E. Alckseev, A. Eiscnbach and D. Pavlidis, “Low interface state density AlN/GaN MISFETs”, ELECTRONICS LETTERS, Vol 35, NO. 24 20th November 1999.
連結: - 7. A.M. Sanchez, F.J. Pacheco, S.I. Molina, “AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)”, Materials Science and Engineering, B93, pp 181-185, 2002.
連結: