以有機金屬化學氣相沉積法成長氧化鋅薄膜

Fabrication of Zinc Oxide Thin Films by MOCVD

詹長恩(CHANG-EN CHAN)

指導教授 ： 溫武義 ； 籃山明

中原大學/工學院/電子工程研究所/碩士(2008年)

https://doi.org/10.6840/cycu200900611

摘要

氧化鋅( ZnO )，一種可應用於製備紫外光發光二極體( UV-LEDs )、
太陽能電池窗戶層( window layers )與液晶顯示器( LCD )透明電極之Ⅱ-Ⅵ族
化合物半導體。
以有機金屬化學氣相沉積法( MOCVD )，藉由低溫ZnO作為成核層
( nucleation layers )，成功於矽( Si )基板上成長ZnO薄膜，透過X-ray繞射
( XRD )、場發射掃描式電子顯微鏡( FE-SEM )與原子力電子顯微鏡( AFM )，
可分析薄膜結構形態學( morphology )，而光激螢光( Photoluminescence )與霍爾
效應( Hall effect )量測，則可了解薄膜光電特性，透過二次離子質譜儀( SIMS )
研究，可知薄膜內雜質分佈；比較不同成長溫度與不同Si晶格面基板，可獲得
成長溫度為400℃，ZnO-on-Si (111)薄膜具有最佳低缺陷結晶品質與光電特性。
研究n型ZnO薄膜，比較鎵( Ga )、鋁( Al )與銦( In )三種元素摻雜，以
摻雜鋁元素形成Al-ZnO薄膜，具有最穩定電學特性，可獲得片電阻率為426.7
/sq與載子濃度為5.27×1019cm-3；而研究p型ZnO薄膜，以摻雜砷( As )元素形
成As-ZnO薄膜，於低溫量測下，其發光機制為施體與受體成對輻射
( donor-acceptor pair, DAP emission )，並可藉此說明成功製作ZnO同質接面結
構。

關鍵字

氧化鋅 ； 有機金屬化學氣相沉積法 ； n型ZnO薄膜 ； As-ZnO薄膜 ； ZnO同質接面結構

並列摘要

Zinc oxide ( ZnO ), one of II-VI compound semiconductors can be used to
fabricate ultraviolet light emitting diodes ( UV-LEDs ), window layers for solar
cells and front electrodes for liquid crystal display ( LCD ).
ZnO films were grown successfully on Si substrates with a low-temperature
grown ZnO nucleation layers by metal organic chemical vapor deposition
( MOCVD ). The structure and surface morphology were characterized by X-ray
diffraction ( XRD ), field emission scanning electron microscopy ( FE-SEM ) and
atomic force microscopy ( AFM ). Optical and electrical properties were examined
by photoluminescence ( PL ), and Hall effect measurements, respectively. Impurity
distribution in the film was investigated by secondary ion mass spectrometry
( SIMS ). The Si substrate of ( 111 ) orientation and the growth temperature of
400℃ could be used to obtain the ZnO films with the optimal crystalline, optical
and electrical properties.
N-type ZnO films were fabricated with the doping of gallium ( Ga ),
aluminum ( Al ) and indium ( In ). The Al-doped films showed the most stable
electrical properties compared with other n-type doped films. A sheet resistivity of
426.7 /sq and an electron carrier concentration of 5.27×1019cm-3 were achieved
for these Al-doped films. On the other hand, p-type ZnO was fabricated by doping
the films with arsenic ( As ). Low temperature PL measurements recognized the
donor-acceptor pair (DAP) emission characteristics of our As-doped ZnO films,
which presents a proof for the successful formation of p-type ZnO. Based on this
result, the fabrication of ZnO homojunction has been completed.

並列關鍵字

MOCVD ； N-type ZnO ； ZnO ； As-doped ZnO ； ZnO homojunction.

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