三五族半導體奈米線之光譜研究

Optical studies of III-V semiconducting nanowires

林大鈞

指導教授 ： 劉祥麟

國立臺灣師範大學/理學院/物理學系/碩士(2003年)

摘要

無資料

關鍵字

半導體 ； 奈米線 ； 光譜

並列摘要

We report on structural, stoichiometric, and optical properties of high-purity and -quality Ⅲ-Ⅴ semiconductoring nanowires, such as GaN, GaP, and InP. The X-ray diffraction data and energy dispersive X-ray spectroscopy confirm that these wire-like structures are indeed GaN, GaP, and InP nanowires, and they can be indexed to hexagonal wurtzite structure and zinc blende structure. Optical reflectance and transmittance spectra of Ⅲ-Ⅴ semiconductoring nanowires reveal infrared-active phonons and electronic absorption bands. The nanosize dependences of Raman peak shift and the broadening of the phonon modes agree with those calculated on the basis of the phonon confinement model. In addition, a new Raman peak observed in the gap between the transverse and longtidinal optical phonons in GaP and InP nanowires is identified as the surface phonon mode using two dielectric response function model. The Raman-scattering studies of certain phonons show a different resonant enhanced behavior, which can be used to verify the electronic structures in these nanowires. Moreover, the temperature dependence of the phononic Raman spectra in these nanowires can be well described in terms of the phonon self-energy corresponding to two-phonon anharmonic processes.

參考文獻

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