以ICP-CVD製備之微晶矽薄膜與其光電特性之研究

田偉辰

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以ICP-CVD製備之微晶矽薄膜與其光電特性之研究

Study of Optical and Electrical Properties for Microcrystalline Silicon Thin Films Prepared by ICP-CVD

田偉辰 , Masters　　Advisor：廖慶聰　　Co-advisor ：翁敏航

繁體中文

微晶矽；薄膜太陽能電池；感應式耦合電漿輔助化學氣相沉積系統； Microcrystalline Silicon ； Thin Flim Solar Cell ； Inductively Coupled Plasma Chemical Vapor Deposition ； ICPCVD

Abstract │ Reference (57) │ Times Cited (1) │ Altmetrics

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

To improve the efficiency of the solar cell device a microcrystalline silicon (&micro;c-Si:H) thin film fabricated by the inductively coupled plasma chemical vapor deposition is studied. Several process parameters such as the hydrogen (H2) gas flows, the substrate temperatures and the radio frequencies (RF) power are selected to make &micro;c-Si:H thin films and then investigate the effects of these parameters on the performance of &micro;c-Si:H thin films. The structural, optical and electrical properties of &micro;c-Si:H thin films are quantitatively measured by Raman spectrum, X-Ray, FTIR, Hall measuremnet, SEM and UV-visible etc.
From the results, it can be observed that the relative crystallinity, the crystal size, the mobility and the range of optical absorption spectrum of &micro;c-Si:H thin films are increased as the increase of the substrate temperature and RF power. In this study, the optimum value of the crystal size observed by Scherrer equation can reach to 15nm. Moreover, the crystallinity factor of &micro;c-Si:H films for each dilution ratio deposited at higher substrate temperature was about 80%. In addtition, the best value of mobility almost reach to 80 cm2/V-s. Nevertheless, results also reveal that changing the dilution ratio of hydrogen to silane won’t improve the performance of &micro;c-Si:H thin films.

Reference ( 57 ) 〈TOP〉

[2] D. M. Chapin, C. S. Fuller, G. L. Pearson, “A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power,” J. Appl. Phys., Vol.25, pp.676, 1954.
連結：
[3] 三菱重工技報，Mass Production Start-up Activities on High Efficiencymicrocrystalline Tandem Solar Cells , Vol.45.No.1, 2008
連結：
[8] J. H. Wu, J. M. Shieh, “Synthesis of Microcrystalline Silicon at Room Temperature Using ICP,” Electrochemical and Solid-State Letters., 7 (6) G128-130, 2004.
連結：
[10] 凃在根，鋁金屬誘發結晶法製備多晶矽薄膜與光電特性之研究，崑山科技大學機械工程系碩士論文，2007。
連結：
[11] 林成，應用於太陽能電池之低溫多晶矽薄膜研究，崑山科技大學機械工程系碩士論文，2006。
連結：

Times Cited (1) 〈TOP〉

陳坤賢(2009)。以HDP-CVD 製備之微晶矽鍺薄膜與其微結構光電特性之研究。崑山科技大學機械工程研究所學位論文。2009。1-112。

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