stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
張維麟 , Masters Advisor：蔡澈雄 Co-advisor ：陳朝烈
-  S.Sundaram, P.Elakkumanan and R.Sridhar, “ High speed robust current sense ampliﬁer for nanoscale memories: a winner take all approach ,” VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on, 2006,6pp.
-  R. Jacob baker, “CMOS circuit design, layout, and simulation,” John Wiley & Sons, Second Edition.
-  Chun-Lung HSU, Mean-Hom HO, Chin-Feng LIN “New Current-Mirror Sense Ampliﬁer Design for High-Speed SRAM Applications,” IEICE TRANS. FUNDAMENTALS, VOL.E89–A, NO.2 FEBRUARY 2006, pp. 377-384.
-  Jung Ha Kim, Chang Yong Ahn, Sang Sun Lee, “A Row Chain Cell Array Structure and Current Sense Amplifier for PoRAM,” Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference.
-  Sinha, M. Hsu et al., “High-performance and low-voltage sense-amplifier techniques for sub-90nm SRAM,” SOC Conference, 2003, pp. 113-116.
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