氧化鎳系化學感測器之研製

謝政諺

doi:10.6844/NCKU.2013.00087

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氧化鎳系化學感測器之研製

Fabrication of Nickel Oxide (NiO) Based Chemical Sensors

謝政諺 , Masters　　Advisor：劉文超　　

繁體中文 DOI： 10.6844/NCKU.2013.00087

延伸式閘極離子感測場效電晶體；氧化鎳；酸鹼感測器；吡咯；參考電極微小化；尿素感測器； EGFET ； NiO ； pH sensor ； pyrrole ； miniaturized reference electrode ； urea biosensor

Abstract │ Reference (114) │ Altmetrics

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In this study, the nickel oxide thin films were fabricated by radio frequency (RF) magnetron sputtering technology to be applied in the ion sensing electrode. Also, the thin film structure is connected with metal-oxide-semiconductor field-effect transistors (MOSFETs) to be the extended-gate field-effect transistors (EGFETs). In the thesis, the best parameters to fabricate nickel oxide are at sputtering power of 50 W, working pressure 0.002 torr, and without the substrate heating for 45 minutes, which has good sensitivity and linearity. In addition, the Hysteresis, drift, and reliability are also investigated.
And then, there are many disadvantages of the commercial reference electrode, such as large size, high cost, and non-portable characteristics. Therefore, the development of miniaturized reference electrode is needed. In the thesis, we develop the polypyrrole-based miniaturized reference electrode by electrodepositing method. According to the experimental result, the stable miniaturized reference electrode is obtained by electrodepositing at applied voltage 5 V for 10 seconds and then treating the base solution.
Finally, we proposed the NiO-based pH electrode as substrate to develop the urea biosensor by enzyme immobilization. According to the experimental result, the sensing range of urea is from 0.31 mg/dl to 80 mg/dl, which is included the normal human urea concentration from 14~31 mg/dl. Therefore, the NiO-based urea biosensor has large potential to be developed.

Reference ( 114 ) 〈TOP〉

1. Eftekhari, “pH sensor based on deposited film of lead oxide on aluminum substrate electrode,” Sens. Actuator B, vol. 88, no. 3, pp. 234-238, Feb. 2003.
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2. P. Shuk and K.V. Ramanujachary, “New metal-oxide-type pH sensors,” Solid State Ion., vol. 86-88, no. 2, pp. 1115-1120, Jul. 1996.
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3. P. Bergveld, “Development of an ion-sensitive solid-state device for neurophysiological measurements,” IEEE Trans. Biomed. Eng., vol. 17, no. 1, pp. 70-71, Jan. 1970.
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4. B. D. Liu, Y. K. Su, and S. C. Chen, “Ion sensitive field effect transistor with silicon nitride gate for pH sensing,” INT. J. Electronics, vol. 67, no. 1, pp. 59-63, 1989.
連結：
5. K. Chen, G. Li, H. Lu, and L. Chen, “Effect of total hydrogen content in silicon nitride sensitive film on performance of ISFET,” Sens. Actuator B, vol. 12, no. 1, pp. 23-27, Mar. 1993.
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