利用原子層沉積系統成長氧化物薄膜及氧化物半導體發光二極體之特性研究

蔡易錡

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利用原子層沉積系統成長氧化物薄膜及氧化物半導體發光二極體之特性研究

Investigation of the oxide films and oxide semiconductor light emitting diodes using by atomic layer deposition

蔡易錡 , Masters　　Advisor：李欣縈　　

繁體中文

氧化鋅；氧化鎂鋅；發光二極體；原子層沉積法；電漿；光電化學氧化法； zinc oxide ； magnesium zinc oxide ； light emitting diodes ； atomic layer deposition ； plasma ； PEC

Abstract │ Reference (48) │ Altmetrics

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n this study, atomic layer deposition (ALD) with plasma was used to grow high quality zinc oxide and magnesium zinc oxide thin films at low temperature. After film formation, zinc oxide film was then treated by the rapid thermal annealing (RTA) system to reduce the carrier concentration and defect emission as a result of oxygen vacancy. The resultant zinc oxide films possess low carrier concentration (3.0 × 1015 cm-3) and high resistivity (2.4 × 102 Ω-cm). The near-band-edge emission (NBE) of zinc oxide is 61% higher than that oxygen vacancy defect emission of zinc oxide films prepared in this work based on the experimental results obtained from the photoluminescence measurement system.
In this study, we also successfully fabricated the p-GaN/i-ZnO/ n-MgZnO short wavelength p-i-n LED showing enhanced performance properties to demonstrate the potential applications based on the oxide thin films prepared in this work.
The improved performance of p-GaN/i-ZnO/n-MgZnO p-i-n LED was primarily attributed to the confinement of electrons and holes arising from the p-GaN and n-MgZnO barrier layer along with the enhancement of the radiative recombination rate in the emitting layer. Due to the injection electrons from n electrode, the electrons passed from the sidewall of the films of the n-type magnesium zinc oxide and the i-zinc oxide to the p-GaN resulted in significant current leakage. To resolve this problem, a protective coating of Zn(OH)2 was applied to the surface and the side wall of LED via the Photoelectrochemical Oxidation Method (PEC) to reduce the electric current leakage. 
 From the electroluminescence spectra of with and without PEC p-i-n LED, the emitting peaks of the p-GaN/i-ZnO/n-MgZnO p-i-n LED are 377nm and 381nm. However, the voltage-current measurement with PEC has obvious improvement. Besides, the peak intensity of the p-GaN/i-ZnO/n-MgZnO p-i-n LED with PEC is 20% higher than the one without PEC.
 Compared other methods involving the growth of zinc oxide thin films by using high temperature substrate, this work illustrated that high quality zinc oxide thin films could be prepared by using low temperature substrate, This method could avoid causing other films having the interdiffusion phenomenon in a high-temperature production process. This method represents a contribution to the integration of semiconductor device.

Reference ( 48 ) 〈TOP〉

[1] A. Shimizu, M. Kanbara and M. Hada, M. Kasuga, “ZnO green light emitting diode,” Jpn. J. Appl. Phys., vol. 17, pp. 1435-1436, 1978.
連結：
[2] W. Z. Liu, H. Y. Xu, L. X. Zhang, L. X. C. Zhang, J. G. Ma, J. N. Wang and Y. C. Liu, “Localized surface plasmon-enhanced ultraviolet electroluminescence fromn-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer,” Appl. Phys. Lett., vol. 101, pp. 142101-1-142101-6, 2012.
連結：
[3] P. C. Wu, H. Y. Lee and C. T. Lee, “Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system,” Appl. Phys. Lett., vol. 100, pp. 131116-1-131116-3, 2012.
連結：
[4] R. Deng, B. Yao, Y. F. Li, Y. Xu, J. C. Li, B. H. Li, Z. Z. Zhang, L. G. Zhang, H. F. Zhao and D. Z. Shen, “Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode,” J. Lumines., vol. 134, pp. 240-243, 2013.
連結：
[5] S. Feng, C. X. Shan, S. P. Wang, B. H. Li, Z. Z. Zhang, C. L. Yang and D. Z. Shen, “Ultraviolet photodetectors fabricated from ZnO p-i-n homojunction structures,” Mater. Chem. Phys., vol. 129, pp. 27-29, 2011.
連結：

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