砷化鎵蝕刻廢液提取鎵資源暨鎵摻雜氧化鋅薄膜合成之研究

田克威

doi:10.6844/NCKU202003072

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砷化鎵蝕刻廢液提取鎵資源暨鎵摻雜氧化鋅薄膜合成之研究

Recovery of Gallium from GaAs Waste Etching Solutions and Synthesis of Ga-Doped ZnO Thin Films

田克威 , Masters　　Advisor：陳偉聖　　

繁體中文 DOI： 10.6844/NCKU202003072

鎵萃取； Cyanex 272 ； GZO薄膜；水溶液法； Gallium extraction ； Cyanex 272 ； GZO thin film ； Aqueous method

Abstract │ Reference (76)

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

This study aims to construct an eco-friendly circular economy system that recovers gallium chloride solution from waste GaAs etching solution and reuses in GZO thin films synthesis. This study divides into two parts, which is gallium extraction and GZO thin films synthesis. In the first part, the simulated GaAs etching solution was extracted using 0.5M Cyanex 272 at pH 2, 0.1 O/A ration for 5 min. The extraction efficiency was 77.5% which had the optimal ratio of concentration. The efficiency was improved to 99.5% through four steps extraction. In order to precipitate arsenic ions from the raffinate, the iron sulfate heptahydrates were added and 99.9% arsenic ions were precipitated when Fe/As ratio was 10. After extraction, the organic phase was stripped using 0.5M HCl at 1 O/A ratio for 3 min, the stripped efficiency attained 97.5%. The purity of recovered gallium chloride solution was 99.95% and the gallium was seven times the concentration of the simulated etching solutions. In the second part, GZO thin films were synthesized with 0.5M zinc chloride aqueous solution, 1 mL surfactant, and were doped with 0~5 at.% gallium. The precursor was coated on the glass substrate by spin coating and annealed at 600℃. Finally, the GZO thin film doped with 3 at.% gallium had an optimal surface and outstanding transmittance. The transmittance was higher than 90% in the visible region.

Reference ( 76 ) 〈TOP〉

[1] W. Chen, L. Tsai, F. Tsai and C. Shu, "Recovery of Gallium and Arsenic from Gallium Arsenide Waste in the Electronics Industry", CLEAN - Soil, Air, Water, vol. 40, no. 5, pp. 531-537, 2012.
[2] A. Ramos-Ruiz, J. Field, W. Sun and R. Sierra-Alvarez, "Gallium Arsenide (GaAs) Leaching Behavior and Surface Chemistry Changes in Response to pH and O2", Waste Management, vol. 77, pp. 1-9, 2018.
[3] Customs Administration, Trade Statistics Search, https://portal.sw.nat.gov.tw/APGA/GA03E, April 20, 2020.
[4] U.S. Geological Survey, Mineral commodity summaries, Reston, Virginia, U.S.A., pp. 62-63, 2019.
[5] 王建楠, 吳宗穎, "砷化氫（Arsine）中毒與職業災害", 中華職業醫學雜誌, 7(4), pp. 169-176 , 2000。

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