stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
-  Maes, H.E.; Degraeve, R.; Nigam, T.; De Blauwe, J.; Groeseneken, G.; “Reliability of ultra-thin dielectrics for giga scale silicon technologies” Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on , 1999 ,Page(s): 7 -14
-  Kundu, S.; Sengupta, S.; Galivanche, R.; “Test challenges in nanometer technologies” European Test Workshop, 2000. Proceedings. IEEE , 2000 Page(s): 83 -90
-  Oussalah, S.; Nebel, F.; “On the oxide thickness dependence of the time-dependent-dielectric-breakdown” Electron Devices Meeting, 1999. Proceedings., 1999 IEEE Hong Kong , 1999 Page(s): 42 -45
-  Momose, H.S.; Ohguro, T.; Nakamura, S.; Toyoshima, Y.; Ishiuchi, H.; Iwai, H.; “Study of wafer orientation dependence on performance and reliability of CMOS with direct-tunneling gate oxide” VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on , 2001 Page(s): 77 -78
-  Takayanagi, M.; Takagi, S.; Toyoshima, Y.; “Gate voltage dependent model for TDDB lifetime prediction under direct tunneling regime” VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on , 2001 Page(s): 99 -100
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