氮砷化銦鎵光檢測器之研製與電性分析

蔡獲列

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氮砷化銦鎵光檢測器之研製與電性分析

Electrical Properties and Fabrication of GaInNAs PIN Photodetectors

蔡獲列 , Masters　　Advisor：蘇炎坤　　

英文

氮砷化銦鎵；光檢測器； photodetectors ； GaInNAs

Abstract │ Reference (33) │ Altmetrics

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In this thesis, we used the novel multiple quantum wells (MQWs) laser structure as our photodetector structure. The GaInNAs/GaAs MQWs was used as the absorption layer of photodetectors by metal organic vapor phase epitaxy (MOVPE).      Lattice-mismatch between GaInNAs and GaAs can be reduced by incorporating proper amount of indium and nitrogen and thus the defects due to lattice mismatch can be reduced. Also, the photodetectors with excellent quality demonstrate lower dark current and noise.
    In the first part, we discuss the electric characteristics of photodetectors with and without cladding layer”AlGaAs”. The cladding layer”AlGaAs” in our photodetector structure will form a double heterostructure, than the valence band discontinuity (∆Ev) and conduction band discontinuity (∆Ec) will occurs. Although the band discontinuities will suppress both the dark current and photocurrent, the decrease of photocurrent is less significantly compared to that of dark current. Consequently, the photodetectors with cladding layer will has the higher photo/dark current contrast ratio and responsivity rejection ratio. 
    In the next part, we compare the electric characteristics between the GaInNAs/GaAs and InGaAs/GaAs multiple quantum well laser structure. Also, we compare the difference between 3 and 5 periods of GaInNAs/GaAs multiple quantum well. The best choice is the 3 periods of GaInNAs/GaAs multiple quantum well laser structure with cladding layer”AlGaAs” which the photo/dark current contrast ratio and responsivity are 100000 and two orders at -2V and its ideal factor is 1.417.

Reference ( 33 ) 〈TOP〉

[5]W. G. Bi and C. W. Tu, Appl. Phys. Lett., 70, 1068, (1997).
連結：
[10]S. M. Spaziani, K. Vaccaro and J. P. Lorenzo, “High performance substrate-removed InGaAs schottky photodetectors”, IEEE Photon. Technol. Lett., 10, 1144, (1998).
連結：
[11]R. H. Yuang and J.-I. Chyi, “Effects of finger width on large-area InGaAs MSM photodetectors”, IEEE Electron. Lett., 32, 131, (1996).
連結：
[12]Winston K. Chan, Gee-Kung Chang, Rajaram Bhat, N. E. Schlotter and C. K. Nguyen, “High-speed Ga0.47In0.53As MISIM photodetectors with dielectric-assisted schottky barriers”, IEEE Electro Device Lett., 10, 417, (1989).
連結：
[13]A. Ketterson, J-W. Seo, M. Tong, K. Nummila, D. Ballegeer, S.-M. Kang, K. Y. Cheng, and I. Adesida, “A 10 GHz bandwidth pseudo-morphic GaAs/InGaAs/AIGaAs MODFET-based OEIC receiver”, (1992).
連結：

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