AlGaN/GaN 高電子遷移率電晶體為pH值感測器的應用

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AlGaN/GaN 高電子遷移率電晶體為pH值感測器的應用

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS AS pH - SENSITIVE DETECTOR

林宗翰 , Masters　　Advisor：張允崇　　

繁體中文

感測器；高電子遷移率電晶體； sensor ； HEMT

Abstract │ Reference (20) │ Altmetrics

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Abstract
In this disseration, the fundamental properties of AlGaN/GaN high electron mobility transistors (HEMTs) and their application as pH sensors were investigated.  First, the electron mobilities for the HEMTs  increase as the ambient temperatures decreases.  In the other hand, the sheet carrier density also decreases.  The observed current between electrodes increases because the effect of the mobility increases is larger than the effect of the sheet carrier density decreases.  We also found that the experitmental results is also affected by the ambient light illumination.  Therefore, the effects from the ambient temperature changes or the light illumination must be suppressed for an accurate pH measurement.  
The fabricated AlGaN/GaN HEMT devices were then used to measure pH value for a liquid.  It was observed that the voltage drop between the drain-source electrodes increases as the pH value of the liquid decreases when constant current flow between the electrodes.  The device was able to distinguish a 0.1 pH change in the liquid.  It was also observed that the sensitivity increases as the temperature of the liquid increases.  The pH sensing ability is believed to be originated from the change of the surface states of the device.  More positively charged surface states presented in the surface area when the concentration of H+ increases in the liqud.  In the other hands, more negatively charged surface states presented when the OH- concentration increase in the liquid.  A further surface potential investigation reveals that the surface potential change 46.77 mV for each pH value changes.  It is proposed that a change of 1056 surface charges is required for each channel carrier density change.
The previous experiments helped us understand the operations of the pH sensors and paving the way for newer device designs.  A newer and high sensitivity design is proposed utilizing the techniques of differential amplifying.  In addition, a design of pH sensor arrays is also proposed in order to measure the pH value at different locations simultaneously.  The fabrications of these new devices will help us further understand the operations of the pH sensors and develop newer applications in different fields.

Reference ( 20 ) 〈TOP〉

[1] U. K. Mishra, P. Parikh, and Y.-F. Wu, “AlGaN/GaN HEMTs—An Overview of Device Operation and Applications”, Proc. IEEE 90, pp.1022 (2002).
連結：
[2] A. P. Zhang, L. B. Rowland, E. B. Kaminsky, J. B. Tucker, J. W. Kretchmer, A. F. Allen, J. Cook, and B. J. Edward ,” 9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55V drain bias”,Electron. Lett. 39, pp.245 (2003)
連結：
[3] M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C.E. Nebel, J. Schalwig, R. Neuberger, G. Muller “GaN-base heterostructures for sensor applications”, Diamond and Related Materials 11 ,(2002) pp.886-891
連結：
[4] R. Gaska M. S. Shura) and A. D. Bykhovski A. O. Orlov and G. L. Snider “Electron mobility in modulation-doped AlGaN–GaN heterostructures” ,APPLIED PHYSICS LETTERS VOLUME 74,
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[6] B. S. Kang, J. Kim, S. Jang, and F. Ren J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum S. N. G. Chu K. Baik, B. P. Gila, C. R. Abernathy, and S. J. Pearton
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