氮化銦鎵摻雜錳應用於太陽能電池之研究

蕭名雯

doi:10.6844/NCKU.2013.00668

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氮化銦鎵摻雜錳應用於太陽能電池之研究

Studies of Mn-doped InGaN Applied to Solar Cells

蕭名雯 , Masters　　Advisor：許進恭　　

繁體中文 DOI： 10.6844/NCKU.2013.00668

氮化銦鎵摻雜錳；中間能帶；太陽能電池； Mn-doped InGaN ； intermediate band ； solar cells

Abstract │ Reference (37) │ Altmetrics

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InGaN alloys has been predicted that a full-solar-spectrum material system could be achieved by the confirmation of InN with its energy band gap around 0.7 eV.  With the combination of InXGa1-XN alloy systems, one may theoretically design tandem photovoltaic devices with optimum band gaps to absorb photon energy between 0.7 eV of infrared and 3.4 eV of ultraviolet regions. In this study, Mn-doped InGaN materials were grown by metalorganic vapor phase epitaxy, and their characterization and properties studied. By using X-ray, transmittance, photoluminescence and electrical properties, the Mn-doped InGaN-based materials and devices were studied. 
We conjecture that the poor quality of Mn-doped InGaN-based materials were attributed to Mn-relative impurity states in the materials. We fabricated the Mn-doped InGaN-based solar cells device in this research. The measurements of transmittance spectrum, relative external quantum efficiency and two photons external quantum efficiency showed the presence of an Mn-relative impurity states that appeared to be intermediate band absorption property, but the efficiency, Voc, Jsc, FF decreased due to the poor quality of Mn-doped InGaN material and high series resistance. Further details of the finding will be discussed in the dissection.

Reference ( 37 ) 〈TOP〉

[1]J. Nelson, "The Physics of Solar Cells, " Imperial College Press, Lodon, 2003.
連結：
[2]J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, et al., "Unusual properties of the fundamental band gap of InN," Appl. Phys. Lett., vol. 80, pp. 3967-3969, 2002.
連結：
[3]A. Luque and A. Martí, "Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels," Phys. Rev. Lett., vol. 78, pp. 5014-5017, 1997.
連結：
[4]A. Luque, A. Martí, and L. Cuadra, "Thermodynamic consistency of sub-bandgap absorbing solar cell proposals," Ieee T Electron Dev, vol. 48, pp. 2118-2124, 2001.
連結：
[5]A. Luque, A. Martí, C. Stanley, N. Lopez, L. Cuadra, D. Zhou, et al., "General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence," J. Appl. Phys., vol. 96, pp. 903-909, 2004.
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