量子點應用於雞蛋白薄膜電晶體記憶元件之研究

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量子點應用於雞蛋白薄膜電晶體記憶元件之研究

Investigation of Albumen Thin Film Transistor Memories Using Quantum Dots

陳敬岡 , Masters　　Advisor：蘇炎坤　　

英文

微接觸壓印；有機記憶電晶體；並五苯；量子點；雞蛋白；水； microcontact printing ； organic memory thin film transistor ； pentacene ； quantum dots ； chicken albumen ； water

Abstract │ Reference (44) │ Altmetrics

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The main purpose of this thesis was focused on the deposition of quantum dots (QDs) thin film in organic memory thin film transistors by microcontact printing technique. In the study of organic thin film transistors, the transfer contact printing method could effectively prevent the destruction of thin film from organic solvent. Besides, contact printing technique has the advantage of thin film patterning. Therefore, the number of leakage current paths could be effectively reduced by the application of contact printing technique in the fabricated procedures. In this study, we used polydimethylsiloxane (PDMS) to be the stamps. After spin coating the QDs on the PDMS stamp, the QDs were then transferred onto the dielectric layer subsequently. The QDs can be used as floating gate of the devices. Floating gate partially offset the internal electric field which inducing the shift of threshold voltage. The shift of threshold voltage accomplished memory effect.
In the study of QDs’ application for transistor-type memory, the basic structure was n+ - Si (gate electrode)/SiO2 (dielectric layer)/poly(methyl methacrylate) (PMMA) (adhesion layer)/quantum dots (floating gate)/pentacene (channel layer)/gold (source and drain layer). The floating gate of conventional devices was fabricated by spin coating the QD-PMMA composite on the SiO2 thin film. Compared with spin coating method, using the PDMS stamp can also successfully transfer QDs onto PMMA layer. The QDs were playing in an important role to capture the carrier charges in the transistor device. The device showed typical transistor characteristics under electrical operation. Under hysteresis testing, the memory window could increase from 25 V with spin coating method to 74.3 V using contact printing technique. And the switching property exhibited over 100 write-read-erase-read cycles. Furthermore, the retention time achieved more than 32 years (109 seconds).
In study of albumen based thin film transistors and memory transistors, the dielectric material was changed to be albumen which is friendly to our environment. The first half of experiment was spin-coating above the surface of chicken albumen thin film with water for changing surface free energy. After increasing the surface free energy of albumen thin film to match with that of active layer (pentacene film), the quality of pentacene crystal was markedly improved. Because the crystal quality of pentacene layer can directly affect performance of transistor, the yield rate could increase from 12.5% to 80% after water treatment. In last half of experiment, the contact printing method was used to fabricate quantum dots. Under Atomic Force Microscopy (AFM) measurements, the surface roughness of albumen film with spin coating method was 3.48 nm and could reduce to 2.48 nm by applying contact printing technique. Furthermore, the surface of chicken albumen thin film was treated by spin coating water for preventing the damage from toluene and efficiently reducing surface roughness. The surface roughness of albumen film could reach 1.47 nm with water protection. After transferring QDs onto albumen film, the transistor-type memory purpose was realized. In this device testing, the memory window was 50.33 V. But the switching property and stability of memory thin film transistors still have room to be improved.

Reference ( 44 ) 〈TOP〉

[2] M. F. Chang, P. T. Lee, S. P. McAlister and A. Chin, “A flexible organic pentacene nonvolatile memory based on high-dielectric layers”, Applied Physics Letters, 93, 233302 (2008)
連結：
[4] I. M. Graza and S. P. Lacour, “Flexible pentacene organic thin film transistor circuits fabricated directly onto elastic silicone membranes”, Applied Physics Letters, 95, 243005 (2009)
連結：
[5] C. S. Kim, S. J. Jo, J. B. Kim, S. Y. Ryu, J. H. Noh, H. K. Baik, S. J. Lee and K. M. Song, “High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate”, Semiconductor Science and Technology, 22, 691 (2007)
連結：
[6] Ch. Pannemann, T. Diekmann and U. Hilleringmann, “N anometer scale organic thin film transistors with Pentacene”, Microelectronic Engineering, 67, 845 (2003)
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[7] Y. H. Kim, D. G. Moon and J. I. Han, “Organic TFT Array on a Paper Substrate”, IEEE Electron Device Letters, 25, 702 (2004)
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