Sn1-xGexSe奈米晶液相合成及可調控能隙研究

郭俊成

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Sn1-xGexSe奈米晶液相合成及可調控能隙研究

Solution-phase synthesis and tunable bandgap of Sn1-xGexSe nanocrystals

郭俊成 , Masters　　Advisor：林文台　　

繁體中文

奈米晶；單一反應器系統； Sn1-xGexSe ；可調控能隙材料； nanocrystals ； one-pot system ； Sn1-xGexSe ； tunable bandgap materials

Abstract │ Reference (107) │ Altmetrics

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The effects of Ge-doping on the synthesis and bandgap of Sn1-xGexSe nanocrystals with 0 ≤ x ≤ 0.7 were studied. Sn1-xGexSe nanocrystals were synthesized at 230-260°C for 5-24 h in the oleylamine (OLA) solvent in a one-pot system. Three different Ge precursors such as Ge, GeI4 and GeCl4 were used for Ge-doping. The result showed that the Ge dopant from the GeCl4 precursor can be more readily incorporated into the SnSe lattice as compared with the other two Ge precursors. The synthesis temperature and time required to form single SnSe phase without the impurities in the Sn1-xGexSe nanocrystals increased with the amount (x) of Ge dopant, revealing that during synthesis in the one-pot system the formation rate of SnSe is faster than that of GeSe even though the Sn precursor, SnCl2, is in the solid state and the Ge precursor, GeCl4, is in the liquid state. The indirect and direct bandgaps of Sn1-xGexSe nanocrystals could be tuned from 0.92 to 1.17 eV and from 1.37 to 1.53 eV, respectively, by increasing the Ge concentration (x) from 0 to 0.7. This study reveals that the Sn1-xGexSe nanocrystals can be simply synthesized in the OLA solvent in a one-pot system without introduction of other reduction agents such as hexamethyl-disilazane.  In addition, the tunable band gap of Sn1-xGexSe nanocrystals may make them potential candidates as the photovoltaic materials.

Reference ( 107 ) 〈TOP〉

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