DOI
stands for Digital Object Identifier
(
D
igital
O
bject
I
dentifier
)
,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
「
http://dx.doi.org/
」
before a DOI.
For instance, if the DOI of an article is
10.5297/ser.1201.002
, you can link persistently to the article by entering the following link in your browser:
http://dx.doi.org/
10.5297/ser.1201.002
。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration ( doi.airiti.com ) 。


- [1] Li, Y. Q., C. A. T. Salama, M. Seufert, P. Schvan, and Mike King (1997), “Design and Characterization of Submicron BiCMOS Compatible High-Voltage NMOS and PMOS Devices,” IEEE Transactions on Electron Devices, 44(2), pp. 331~338
連結: - [2] B. S. Doyle, Member, IEEE, and K. R. Mistry, Member, IEEE "Anomalous Hot-Carrier Behavior for LDD p-Channel Transistors " IEEE Electron Device Letters VOL.14 No.11 November, 1993
連結: - [4] Zitouni, M., F. Morancho, H. Tranduc, P. Rossel, J. Buxo, I. PageÁs, and S. Merchant (1999), “A new lateral power MOSFET for smart power ICs: the ``LUDMOS concept'”, Microelectronics Journal , 30(6), pp. 551~561
連結: - [6] Mikoshiba, H., T Horiuchi, and K. Hamano (1986), “Comparison of Drai Structures in n-Channel MOSFET’s,” IEEE Transactions on Electron Devices, vol.ED-33, no. 1, 1986, pp.140~144
連結: - [7] Ogura, S., P. J. Tsang, W.W. Walker, D.L. Critchlow, and J.F. Shepard (1981), “Elimination of hot electron gate current by the lightly doped drain-source structure,” IEEE Electron Devices Meeting, International, 27, pp. 651~654
連結: