stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
-  Vaidyanathan Subramanian (2009) ,High Voltage MOSFET Technology, Models, and Applications, IBM
-  Shrivastava, M., Jain, R., Baghini, M.S., Gossner, H., and Ramgopal Rao, V. (2010), “A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device”,IEEE Transactions on Electron Devices, 57(2), pp. 448-457
-  VanDerVoom, P., Gan, D., and Krusius, J.P. (2000),“CMOS shallow-trench-isolation to 50-nm channel widths”,IEEE Transactions on Electron Devices, 47(6), pp.1175 –1182
-  Yamaguchi, Y, Iwamatsu, T., Joachim, H.-O., Oda, H., Inoue, Y., Nishimura, T., and Tsukamoto, K. (1994), “Source-to-drain breakdown voltage improvement in ultrathin-film SOI MOSFET's using a gate-overlapped LDD structure”,IEEE Transactions on Electron Devices, 41(7), pp.1222-1226
-  P. De., and P. K. Chakraborty (2004), “Effect of punch through on the microwave series resistance of n + np + Si IMPATT diodes around the X band”, Japanese Journal of Applied Physics (JJAP), 19(7), pp.859-863
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