利用非等向性蝕刻氮化鎵與藍寶石基板介面製作高效率紫外光發光二極體

洪政暐

doi:10.6842/NCTU.2009.00370

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利用非等向性蝕刻氮化鎵與藍寶石基板介面製作高效率紫外光發光二極體

High Efficient UV LED with Anisotropically Etched GaN-sapphire Interface

洪政暐 , Masters　　Advisor：郭浩中;盧廷昌　　

英文 DOI： 10.6842/NCTU.2009.00370

氮化鎵；非等相性蝕刻；發光二極體；紫外光； GaN ； Anisotropically Etched ； Light emitting-diode ； Ultra-violet

Abstract │ Reference (21) │ Times Cited (2) │ Altmetrics

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We report the fabrication and study of high efficient UV light emitting diodes (UVLED) with inverted pyramid microstructures at GaN-sapphire interface. The HIP structures were created by anisotropic chemical wet etching. The UV LED was fabricated by growth interrupt, chemical etching, and regrowth processes. The as grown sample showed reduction of dislocation density in the cross-section TEM images and narrow XRD rocking curves. The ML-ELOG mechanism might elucidate the reason for threading dislocation reduction. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA operating current and the output power integrated over all directions was improved by 85% compared to a reference sample. 
The ray tracing simulation and three-dimension far field pattern experimental results of UVLED with HIP GaN/air structure are reported. The HIP structure could reduce the view angle, which redirects the escape light employed by optical geometric property and refraction index difference within GaN/air/Sapphire. The UVLED with inverted pyramid structures have significantly enhanced the light extraction efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in ML-ELOG regrowth process. 
Besides, we might employ the structure weakness near the interface, to remove to sapphire substrate with thermal bonding process for fabricate thin GaN LED. Indeed we have had successfully remove sapphire substrate by mechanical lift-off to develop the large area lift-off by HIP structure.

Reference ( 21 ) 〈TOP〉

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連結：
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