高頻高功率應用之氮化鎵系列半導體

張家達

doi:10.6842/NCTU.2011.00386

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高頻高功率應用之氮化鎵系列半導體

Fabrication and Characterization of GaN-based Semiconductor Devices for High Frequency and High Power Applications

張家達 , Ph.D　　Advisor：張翼　　

英文 DOI： 10.6842/NCTU.2011.00386

氮化鎵；高電子遷移率電晶體；張應力；低雜訊；增強型； GaN ； HEMT ； Tensile strain ； low noise ； normally-off

Abstract │ Reference (65) │ Altmetrics

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GaN-based semiconductors are promising candidates for RF high frequency wireless, power electronics, and optoelectronics applications. This thesis focuses GaN-based High Electron Mobility Transistors (HEMTs) for high frequency and high power application. First of all, the characteristics of unpassivated AlGaN/GaN HEMTs under uniaxial tensile strain were investigated. Mechanical stress can produce additional charges resulting in the change of HEMT channel current. This phenomenon depends on gate orientation, and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. Additionally, results show that tensile strain reduces the transient current, which is likely due to the additional donor-like surface states created through the piezoelectric effect. Secondly, a 100-nm gate-recessed n-GaN/AlGaN/GaN HEMT with low noise properties at 30 GHz is demonstrated. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28•mm, and a low gate leakage current of 0.9 μA/mm when biased at VGS = −3 V and VDS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5dB are achieved. To the best of our knowledge, this is the first and the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs. Finally, a normally-off operation AlGaN/GaN HEMT with high threshold voltage is developed utilizing a Fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved using a 16-nm-thick Al2O3 gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm. These performances are comparable to the conventional normally-on devices.

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Chapter 1
連結：
1-1 Mishra, U.K., P. Parikh, and Y.F. Wu, “AlGaN/GaN HEMTs - An overview of device operation and applications”. Proceedings of the IEEE. Vol. 90, p. 1022-1031, 2002.
連結：
1-3 O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys. vol. 85, no. 6, pp. 3222–3233, March 1999.
連結：
1-4 J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors,” Appl. Phys. Lett., vol. 77, no. 2, pp. 250–252, July 2000.
連結：
1-5 S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno, “Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density” Appl. Phys. Lett., vol. 73, no. 6, pp. 809–811, August 1998.
連結：

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