stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
- Chapter 1
- 1-1 Mishra, U.K., P. Parikh, and Y.F. Wu, “AlGaN/GaN HEMTs - An overview of device operation and applications”. Proceedings of the IEEE. Vol. 90, p. 1022-1031, 2002.
- 1-3 O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys. vol. 85, no. 6, pp. 3222–3233, March 1999.
- 1-4 J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors,” Appl. Phys. Lett., vol. 77, no. 2, pp. 250–252, July 2000.
- 1-5 S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno, “Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density” Appl. Phys. Lett., vol. 73, no. 6, pp. 809–811, August 1998.
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