含銦鋅氧化物之薄膜電晶體之濕式製程研究

王玟娟

doi:10.6842/NCTU.2011.00528

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含銦鋅氧化物之薄膜電晶體之濕式製程研究

A Study of Wet Process for Preparing Thin-film Transistors Containing Indium-doped Zinc Oxide

王玟娟 , Masters　　Advisor：謝宗雍　　

繁體中文 DOI： 10.6842/NCTU.2011.00528

薄膜電晶體；氧化物；濕式製程； TFT ； Oxide ； Wet

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This study employs the polyol process to prepare the indium-doped zinc oxide (IZO) thin films to serve as the active channel layer of thin-film transistor (TFT). By using diethylene glycol (DEG) as the solvent/chelating agent, zinc acetate salt and indium acetate salt as the Zn and In sources and polyvinylpyrrolidone (PVP) as the protective agent, we successfully synthesized the IZO precursor via a 180C thermal process for 2 hrs. By centrifugating the sediment from supernatant and further dispersing it in pentanol, the IZO layers were prepared by the spin-coating method in conjunction with a post annealing in air ambient. The parameters subjected to investigation include the reaction temperature and time, water addition amount, annealing temperature and time so as to explore their effects on microstructures and physcial properties of IZO thin films. Consequently, the IZO layer was implanted in TFT devices and the electrical performance of devices was evaluated.
The effects of In content on the electrical properties of IZO-TFT were also investigated. Analytical results indicated that the on current and off cureent increase with the increase of In content and the transfer characteristic profiles tends to shift to the negative bias side. At In/Zn composition ratio = 5 mol.%, the TFT device exhibited the best performance with the carrier mobility () = 0.595 cm2/Vsec, on/off ratio = 1.1×106, threshold voltage (VTH) = 4.33 V and subthreshold swing (S.S.) = 5.11 V/decade.

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