stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
黃冠寧 , Masters Advisor：張翼
英文 DOI： 10.6842/NCTU.2011.00834
- Chapter 1
- [1-2] Jean-Claude Gerbedoen, Ali Soltani, Sylvain Joblot, Jean-Cluade De jaeger, Christophe Gaquiere, Yvon Cordier, and Fabrice Semond,“AlGaN/GaN HEMT on (001) Silicon Substrate With Powe Density Performance of 2.9 W/mm at 10GHz,” IEEE Trans. Electron Device 57, 7 (2010).
- [1-3] L.Wang, W.D.Hu, X.S. Chen, and W. Lu,“ The Role of Ultrathin AlN in the Reduction in the Hot Electron and Self-Heating Effects for GaN-Base Double Heterojunction High Electron Mobility Transistors,” Journal of Applied Physics 108,054501(2010)
- [1-4] Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi, Eric Feltin, Jean-Francois Carlin, Marcus Gonschorek, Nicolas Grandjean,“Ultrahigh-Speed AllnN/GaN high Electron Mobility TransistorsGrown on (111) High-Resistivity Silicon with FT=143,” Applied Physics Express 3, 094101 (2010).
- [1-6] Yueh-Chin Lin, Edward Yi Chang, Hiroshi Yamaguchi, Wei-Cheng Wu, and Chun-Yen Chang, “A δ-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement,” IEEE Transaction on Electron Devices, vol. 54, no. 7, July 2007.
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