研究藉由多閘極製程改善成長於矽基板上之氮化鋁鎵/氮化鎵高速電子遷移率電晶體元件之線性度

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研究藉由多閘極製程改善成長於矽基板上之氮化鋁鎵/氮化鎵高速電子遷移率電晶體元件之線性度

Study of Device Linearity Improvement for the AlGaN/GaN HEMTs on Silicon Substrate by Using Multi-Gate Process

黃冠寧 , Masters　　Advisor：張翼　　

英文

氮化鎵；三階交叉點；多閘極；八十奈米閘極線寬； lGaN/GaN High Electron Mobility Transistors ； GaN ； 80 nm gate length ； multi-gate ； third order intermodulation point

Abstract │ Reference (55) │ Altmetrics

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In this study, the 80 nm gate length AlGaN/GaN High Electron Mobility Transistors were successfully fabricated. Moreover, by using the innovative multi-gate technique, the linearity of devices has significant improvement. In the 80nm gate length AlGaN/GaN HEMTs, the devices possessed high saturation current, high transconductance and high current-gain cut-off frequency. However, the short channel effect led to the high leakage current. After the discussion, this phenomenon could be improved by using the gate recess technique to suppress the short channel effect and gate leakage current.
    Nevertheless, due to the high electric field under the gate domain, the electron over shoot effect could be observed in 80 nm gate length devices. In this study, the multi-gate devices were successfully fabricated. By the experiment data analysis and paper evidence, it could be found that multi-gate effectively reduced the high electric field. It made the electron possessed a stable electron velocity under the gate domain and further to suppress the velocity overshoot effect. The multi-gate devices could stably increase the drain current and maintain the transconductance value under a larger gate bias region; furthermore, multi-gate devices possessed the electrical characteristic as same as the nanometer gate length device. After the measurement, the maximum third order intermodulation point (IP3) of 30.54 dBm could be achieved in the triple-gate devices. It shown that multi gate could effectively improve the linearity of devices. In addition, the third order intermodulation points of the multi-gate and single gate device under the different gate bias are also compared in this study. By analyzing the function of IDS versus VGS, It could successfully demonstrated that the multi-gate device have the higher IP3 in the larger IDSS % region. Therefore, it could be known that multi gate technique could effectively improve the linearity performance. 
In the future, the multi-gate AlGaN/GaN HEMTs have the great potential to be the RF power amplifier applied in the modern wireless communication system.

Reference ( 55 ) 〈TOP〉

[1-2] Jean-Claude Gerbedoen, Ali Soltani, Sylvain Joblot, Jean-Cluade De jaeger, Christophe Gaquiere, Yvon Cordier, and Fabrice Semond,“AlGaN/GaN HEMT on (001) Silicon Substrate With Powe Density Performance of 2.9 W/mm at 10GHz,” IEEE Trans. Electron Device 57, 7 (2010).
連結：
[1-3] L.Wang, W.D.Hu, X.S. Chen, and W. Lu,“ The Role of Ultrathin AlN in the Reduction in the Hot Electron and Self-Heating Effects for GaN-Base Double Heterojunction High Electron Mobility Transistors,” Journal of Applied Physics 108,054501(2010)
連結：
[1-4] Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi, Eric Feltin, Jean-Francois Carlin, Marcus Gonschorek, Nicolas Grandjean,“Ultrahigh-Speed AllnN/GaN high Electron Mobility TransistorsGrown on (111) High-Resistivity Silicon with FT=143,” Applied Physics Express 3, 094101 (2010).
連結：
[1-6] Yueh-Chin Lin, Edward Yi Chang, Hiroshi Yamaguchi, Wei-Cheng Wu, and Chun-Yen Chang, “A δ-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement,” IEEE Transaction on Electron Devices, vol. 54, no. 7, July 2007.
連結：
[2-1] U.K. Mishra, P. Parikh, Y.F. Wu, ”AlGaN/GaN HEMTs: An overview of device operation and applications,” Processdings of The IEEE, Vol. 90,No.6, June 2002.
連結：

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