研究藉由氧化鋁為閘極絕緣層來改善成長於矽基板上之氧化鋁鎵/氮化鎵高電子遷移率電晶體之線性度

陳玉芳

doi:10.6842/NCTU.2011.01023

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研究藉由氧化鋁為閘極絕緣層來改善成長於矽基板上之氧化鋁鎵/氮化鎵高電子遷移率電晶體之線性度

Study of AlGaN/GaN MOS-HEMTs on Silicon Substrate with Al2O3 Gate Insulator for Device Linearity Improvement

陳玉芳 , Masters　　Advisor：張翼　　

繁體中文 DOI： 10.6842/NCTU.2011.01023

金氧半高速電子遷移率電晶體；氧化鋁鎵/氮化鎵；線性度；高速電子遷移率電晶體；氧化鋁；矽基板； MOS-HEMT ； AlGaN/GaN ； linearity ； HEMT ； A2O3 ； Si substrate

Abstract │ Reference (48) │ Altmetrics

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Superior properties of AlGaN/GaN HEMTs are promising contenders for high-power, high-temperature, high-breakdown, and high-frequency applications and have attracted much attention recently. However, one of the key issues for using AlGaN/GaN HEMTs for high-power radio-frequency (RF) applications is the quality of the transiting signals. For the modern wireless communication, here are many users, and the neighboring frequencies are usually located closely to each other. Hence, it is important to suppress the signal distortions for the device used in the communication system could not induce signal distortions. A among all intermodulation distortions, third-order intermodulation distortion (IM3) usually cannot be filtered out by the filter; therefore, IM3 dominates the linearity performance of the device and is the most important linearity criteria for wireless communication system. In this study, it’s found that MOS-HEMT exhibits better linearity and higher channel saturation current compared to the HEMTs with Schottky-gate. In this paper, we present the linearity characteristics of the Al2O3 AlGaN/GaN MOS-HEMTs on Si substrates with gate length 1.5μm, and compare it with the regular AlGaN/GaN HEMTs devices for device linearity improvement in this study.

Reference ( 48 ) 〈TOP〉

[2] Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, “10-W/mm AlGaN-GaN HFET with a field modulating plate,” IEEE Electron Device Lett., vol. 24, no. 5, pp. 289-291, May 2003.
連結：
[5] Y. Pei, et. al, “Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9W/mm at 10GHz ” Jpn. J. Appl. Phys., Vol. 46,pp. L1087-L1089,2007.
連結：
[6] Wu, Y.Q., Y. Xuan, T. Shen, P.D. Ye, Z. Cheng, and A. Lochtefeld, "Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics." Appl. Phys. Lett., vol. 91, no. 2, 2007.
連結：
[7] Huang, M.L., Y.C. Chang, C.H. Chang, Y.J. Lee, P. Chang, J. Kwo, T.B. Wu, and M. Hong, "Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3." Appl. Phys. Lett., vol. 87, no. 25, 2005.
連結：
[8] Xuan, Y., H.C. Lin, P.D. Ye, and G.D. Wilk, "Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric." Appl. Phys. Lett., vol. 88, no. 26, 2006.
連結：

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