單一相Cu2ZnSnS4濺鍍靶材之製備及其應用於薄膜太陽能電池光吸收層之研究

紀懿芳

doi:10.6842/NCTU.2014.01071

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單一相Cu2ZnSnS4濺鍍靶材之製備及其應用於薄膜太陽能電池光吸收層之研究

Preparation of Single-phase Cu2ZnSnS4 Sputtering Target and Its Application to Light Absorption Layer of Thin-film Solar Cells

紀懿芳 , Masters　　Advisor：謝宗雍　　

繁體中文 DOI： 10.6842/NCTU.2014.01071

銅鋅錫硫、Kesterite、太陽能電池； Cu2ZnSnS4、Kesterite、Thin-film Solar Cell

Abstract │ Reference (74) │ Altmetrics

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This study prepares the 2-inch Cu2ZnSnS4 (CZTS) targets by the solid-state reaction of CuS, ZnS and SnS2 raw powders at various Cu molar ratios, reaction times and temperatures. Accordingly, the influence of powder constitution and heat-treatment conditions on microstructure, composition and morphology of CZTS targets were investigated. X-ray diffraction and Raman spectroscopy analyses indicated that the sample prepared at the powder ratio of 1.6:1:1:4 forms the single kesterite CZTS phase structure via the sintering at 600C for 8 hrs. Scanning electron microscopy/energy dispersive spectroscopy analysis revealed that the CZTS is of the Cu-poor/Zn-rich structure with the stoichiometric ratio of Cu26.57Zn13.79Sn12.74S46.72. The CZTS target was then transferred to a sputtering system for depositing the CZTS light absorption layers at working pressures of 5 and 10 mtorr. With a post annealing treatment at 550C for 1 hr in sulphur ambient, the single-phase, Cu-poor/Zn-rich CZTS thin film with the stoichiometric ratio of Cu24.25Zn12.63Sn12.15S50.97 was achieved. The bandgap and absorption coefficient of such a CZTS layer was 1.4-1.5 eV and 5.3104-3.2104 cm1 as characterized by UV-Visible spectroscopy. Hall-effect measurement found that the CZTS layers are p-type semiconductors and the CZTS layer deposited at working pressure of 5 mtorr exhibits the best carrier concentration of 2.11016 cm3 and mobility of 9.82 cm2V1sec1. Analytical results of CZTS targets prepared at various Cu contents iindicatd that the samples prepared at the Cu molar ratios of 1.6 and 1.8 are of the single-phase CZTS structure whereas the sample prepared at the Cu molar ratio of 2 contains the binary CuS phase. In conjunction with the results of physical property analyses, the CZTS target prepared at the Cu molar ratio of 1.6 was found to be suitable for photovoltaic applications.

Reference ( 74 ) 〈TOP〉

[1] P.K. Nayak and D. Cahen, “Updated Assessment of Possibilities and Limits for Solar Cells”, Adv. Mater., 26(2014), p.1622-1628.
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[2] A. Nagaoka, K. Yoshino, H. Taniguchi, T. Taniyama and H. Miyak, “Preparation of Cu2ZnSnS4 Single Crystals from Sn Solutions”, J. Cryst. Growth, 341(2012), p.38-41.
連結：
[4] 曾才榮，“太陽電池技術專利的分析與探究”，國立政治大學科技管理研究所碩士論文，(2007)。
連結：
[6] D.L. Staebler and C.R. Wronski, “Reversible Conductivity Changes in Discharge‐produced Amorphous Si”, Appl. Phys. Lett., 31(1977), p.292-294.
連結：
[7] H. Fritzsche, “Photo-induced Structural Changes Associated with the Staebler-wronski Effect in Hydrogenated Amorphous Silicon”, Solid State Commun., 94(1995), p.953-955.
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