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Search Symbol (Half-width) Description of Search Symbols
Space "AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " ) Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" : " image process "
? Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
* Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )

Boolean logic combinations of key words is a skill used to expand or refine search parameters.
(1) AND (1) AND: Refines search parameters
(2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters


DOI stands for Digital Object Identifier ( D igital O bject I dentifier ) ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「」 「 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: 10.5297/ser.1201.002
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI ) 。

Abstract 〈TOP〉
Parallel Abstract 〈TOP〉
Reference ( 20 ) 〈TOP〉
  1. [5] J. H. Liao, J. Y. Hsieh, *H. T. Lue, L. W. Yang, T. Yang, K. C. Chen, and C. Y. Lu, " Performance and Reliability Optimizations of BE-SONOS NAND Flash Using SiON Bandgap-Tuning Tunneling Barrier," Reliability Physics Symposium (IRPS), IEEE International, pp. 639-643, Anaheim, USA, May 2010.
  2. [6] E. Vianello, F. Driussi, A. Arreghini, P. Palestri, D. Esseni, L. Selmi, N. Akil, M. J. van Duuren, and D. S. Golubovi´ , " Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells," ELECTRON DEVICES, IEEE TRANSACTIONS ON, vol. 56, pp. 1980-1990, 2009.
  3. [7] A. Padovani, A. Arreghini, L. Vandelli, L. Larcher, G. Van den Bosch, P. Pavan, and J. Van Houdt, "A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations," Electron Devices, IEEE Transactions on, vol. 58, pp. 3147-3155, 2011
  4. [8] C. M. Compagnoni, , A. Mauri, S. M. Amoroso, A. Maconi, and A. S. Spinelli, " Physical Modeling for Programming of TANOS Memories in the Fowler–Nordheim Regime," Electron Devices, IEEE Transactions on, vol. 56, pp. 2008-2015, 2009
  5. [9] S. M. Amoroso, C. M. Compagnoni, A. Mauri, A. Maconi, A. S. Spinelli, and Andrea L. Lacaita, " Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories," Electron Devices, IEEE Transactions on, vol. 58, pp. 3116-3123, 2011.
Times Cited (1) 〈TOP〉
  1. 黃義雄(2006)。具隱私性之簽章及簽密系統研究。中央大學資訊工程學系學位論文。2006。1-87。
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