DOI
stands for Digital Object Identifier
（
D
igital
O
bject
I
dentifier
）
,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
「
http://dx.doi.org/
」
before a DOI.
For instance, if the DOI of an article is
10.5297/ser.1201.002
, you can link persistently to the article by entering the following link in your browser:
http://dx.doi.org/
10.5297/ser.1201.002
。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
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- [5] J. H. Liao, J. Y. Hsieh, *H. T. Lue, L. W. Yang, T. Yang, K. C. Chen, and C. Y. Lu, " Performance and Reliability Optimizations of BE-SONOS NAND Flash Using SiON Bandgap-Tuning Tunneling Barrier," Reliability Physics Symposium (IRPS), IEEE International, pp. 639-643, Anaheim, USA, May 2010.
連結：
- [6] E. Vianello, F. Driussi, A. Arreghini, P. Palestri, D. Esseni, L. Selmi, N. Akil, M. J. van Duuren, and D. S. Golubovi´ , " Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells," ELECTRON DEVICES, IEEE TRANSACTIONS ON, vol. 56, pp. 1980-1990, 2009.
連結： - [7] A. Padovani, A. Arreghini, L. Vandelli, L. Larcher, G. Van den Bosch, P. Pavan, and J. Van Houdt, "A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations," Electron Devices, IEEE Transactions on, vol. 58, pp. 3147-3155, 2011
連結： - [8] C. M. Compagnoni, , A. Mauri, S. M. Amoroso, A. Maconi, and A. S. Spinelli, " Physical Modeling for Programming of TANOS Memories in the Fowler–Nordheim Regime," Electron Devices, IEEE Transactions on, vol. 56, pp. 2008-2015, 2009
連結： - [9] S. M. Amoroso, C. M. Compagnoni, A. Mauri, A. Maconi, A. S. Spinelli, and Andrea L. Lacaita, " Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories," Electron Devices, IEEE Transactions on, vol. 58, pp. 3116-3123, 2011.
連結：
