轉貼法二硫化鉬場效電晶體製程技術開發及特性改善之研究

陳鴻毅

3.232.129.123，Hello！

Close
Search Quick Search Advanced Search Publication Search	Personal Service Member Login Searching History Use Bonus Card SYMSKAN
Browse Browse by University of Graduate Thesis Browse by Pinyin of Graduate Thesis Browse by Conference Proceedings Topic Browse by Conference Proceedings Publisher Browse by Pinyin of Conference Proceedings Browse by eBook Category Browse by eBook Topic Browse by eBook Publisher
Customer Services Authorize Airiti Recommend a Journal

Search Symbol (Half-width)	Description of Search Symbols
Space	"AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " )	Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" ： " image process "
?	Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
*	Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT	Boolean logic combinations of key words is a skill used to expand or refine search parameters. (1) AND (1) AND: Refines search parameters (2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

DOI stands for Digital Object Identifier （ D igital O bject I dentifier ） ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ）。

Data Source

College of Engineering > Department of Materials Science and Engineering
Engineering > General Engineering

Bibliography Management Tool

Related Links

Report an Issue

Purchase Single Articles

Download PDF

轉貼法二硫化鉬場效電晶體製程技術開發及特性改善之研究

Study of Process Development on Exfoliated MoS2 FETs and Device Performance Improvement

陳鴻毅 , Masters　　Advisor：張翼　　

英文

二硫化鉬；場效電晶體；轉貼法； MoS2 ； FETs ； Exfoliated Process

Abstract │ Reference (34) │ Altmetrics

Abstract 〈TOP〉

Parallel Abstract 〈TOP〉

Transition metal dichalcogenides (TMDCs) materials attract many attention recently, and MoS2 is one of them. MoS2 has been used as a channel material, and owns high Ion/Ioff ratio and high mobility. However, high contact resistance (Rc) limits the electrical performance of MoS2 FETs and the achievement of Ohmic contacts for MoS2 stays a challenge so far. Recent studies reveals that the MoS2 FETs are basically a Schottky barrier transistor whose transistor characteristics is controlled by varying the Schottky barrier height. Therefore, a lot of research has focused on the contact metal. Furthermore, most of these reports still showed a non-negligible Schottky barrier height which result from fermi-level pinning. A stable and effective method to reduce the contact resistance is quite essential in fabricating a functional MoS2 FETs.
In this study, a stable fabrication process of exfoliated 2D material FETs was established, and it could be an important foundation of our 2D material research. Also, this thesis demonstrates our attempts to achieve a good performance MoS2 FETs. First, the Argon treatment is used to increase the sulfur vacancies to lead to n-type behavior of the MoS2 FET. The on-current is enhanced from 25 nA/µm to 250 nA/µm. Second, the chloride doping method is also adopted to increase the electron densities which induce the Schottky barrier thinning to raise the possibility of electron tunneling. The on-current is enhanced from 0.1 µA/µm to 13 µA/µm which owns 2 order improvement. Finally, the PMMA is used to passivate our device from ambient environment to avoid the MoS2 oxidizing and dopant escaping.

Reference ( 34 ) 〈TOP〉

[1] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti and A. Kis, “Single-layer MoS2 transistors,” Nature nanotechnology vol6 pp.147-150 (2011).
連結：
[2] Qing Hua Wang, Kourosh Kalantar-Zadeh, Andras Kis, Jonathan N. Coleman and Michael S. Strano, ”Electronics and optoelectronics of two-dimensional transition metal dichalcogenides” Nature nanotechnology vol7 pp. 699-712 (2012).
連結：
[4] Jiahao Kang, Deblina Sarkar, Wei Liu, Debdeep Jena and Kaustav Banerjee, “A Computational Study of Metal-Contacts to Beyond-Graphene 2D Semiconductor Materials” IEEE IEDM, 2012, pp. 17.4.1-17.4.4.
連結：
[6] Yuchen Du, Lingming Yang, Han Liu, and Peide D. Ye, “Contact research strategy for emerging molybdenum disulfide and other two dimensional field-effect transistors” APL Materials 2, 092510 (2014)
連結：
[7] Adam T. Neal, Han Liu, J.J. Gu, and P.D. Ye, “Metal Contacts to MoS2: a Two-Dimensional Semiconductor” IEEE Device Research Conference 65th Annual (2012).
連結：

Altmetrics

〈TOP〉

E-mail ：

When an article is available to download, a notice will be sent to your mailbox address.

E-mail ：