砷化鎵增強/空乏型雙閘極高電子遷移率電晶體於微波/毫米波放大器設計

隨著無線通訊的快速發展，相關的微波元件以及微波電路日趨重要。本論文主要討論雙閘極E/D-Mode pHEMT應用在射頻電路放大器的應用，由於雙閘極E/D-Mode pHEMT具有高fmax的特性以及製程上成本的優勢，目標是希望利用0.5 μm 雙閘極E/D-Mode pHEMT 實現0.15 μm pHEMT製程所製作的電路特性。第一章為整篇論文的導論，第二章分析雙閘極E/E 和E/D-Mode pHEMT元件的直流、高頻和功率等特性，以及利用實際的電路驗證雙閘極E/E 和E/D-Mode pHEMT元件應用在實際電路上的可行性；元件量測上，利用HP IC-CAP軟體，配合HP-4142B直流分析儀與HP-8510C網路分析儀量測元件的直流、高頻特性，此外，也利用實驗室的Maury load pull 系統，量測元件的功率特性；第三章討論利用雙閘極E/E 和E/D-Mode pHEMT元件所設計的Ka-band 微波增益放大器，驗證雙閘極E/E 和E/D-Mode pHEMT元件在高頻電路上的可行性，第四章則是利用Lange耦合器搭配兩個獨立的微波增益放大器實現平衡式Ku /K-band的微波增益放大器；第五章則是延續雙閘極的架構，利用0.15 μm pHEMT疊接的架構設計一個V-band 寬頻低雜訊放大器；第六章歸納本論結果，並做一個結論。

關鍵字

增強/空乏型；高電子遷移率電晶體；放大器；雙閘極；砷化鎵

並列摘要

The technology of the microwave is developed fast, the devices and the circuits about microwave is so important. We have studied the microwave/ millimeter-wave Amplifier Design using GaAs enhancement/depletion mode dual-gate pHEMT in the thesis. Because of the dual-gate E/D-Mode pHEMT owning the advantage of high fmax and low cost, we hope to design amplifier applied at high frequency using 0.5 μm dual-gate E/D-Mode pHEMT. In chapter two, we have analyzed the performance of the 0.5 μm dual-gate E/E and E/D-Mode pHEMT. In the chapter three and four, we have designed the amplifier applied at high frequency using 0.5 μm dual-gate E/E and E/D-Mode pHEMT. In chapter five, we have designed the V-band low noise amplifier using0.15 μm pHEMT according to dual-gate topology. In the final chapter, we summarized the results in this thesis.

並列關鍵字

amplifier ； pHEMT ； dual-gate ； e/d mode

參考文獻

[26] 吳佳賢”雙閘極高電子遷移率電晶體之研究及其在單晶微波積體電路之應用”國立中央大學電機工程研究所論文民國95年

[39]David M. Pozar”Microwave Engineering”John Wiley & Sons,Inc. 2005

[41] Donald A.Neamen”Semiconductor Physics and Devices Basic Principles”McGraw-Hill company 2003

[1] R. Hagelauer et.al, "A Gigasample/Second 5-b ADC with On-Chip Track and Hold Based on an Industrial 1-pm GaAs MESFET E/D Process", IEEE J. of Solid-State Circuits Vol.27, N0.10, pp.1313-1320 , 1993.

[2] S. Feng et.al, "Statistical Characterization of GaAs E/D HEMT Analog Components for Data Conversion ICs", Proc. European GaAs and Related 111-V Compounds Applications symp., pp.169-172, 1994.

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砷化鎵增強/空乏型雙閘極高電子遷移率電晶體於微波/毫米波放大器設計

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