用新變數法探討一維半導體元件之交流模擬

New Variables for AC Simulation of 1–D Semiconductor Devices

吳賀傑(Ho-Chieh Wu)

指導教授 ： 蔡曜聰

國立中央大學/資訊電機學院/電機工程學系/碩士(2007年)

摘要

在這篇論文中，我們使用新變數來處理一維元件之AC模擬，同時，使用兩種方法來執行模擬，其一是經由內部模擬器來進行，另一個是經由外部模擬器，也就是我們實驗室所開發的AC_CKT 電路模擬器來執行。我們會介紹AC_CKT的使用方法並用幾個範例來介紹輸入檔的撰寫格式，然後我們以一個金氧半電晶體來做驗證，在不同頻率下量測其C-V曲線，最後比較兩種方法得到的模擬結果。

關鍵字

交流

並列摘要

In this thesis, we use new variables to process 1-D device ac simulation. We develop two methods for ac simulation. One is through the internal ac solver. The other is through AC_CKT simulator which is developed by our group. We will introduce the AC_CKT simulator and use some examples to show how to write the input file for the AC_CKT simulator. Then, we use an MOS capacitor as an example to measure the C-V curve under different frequencies. Finally, we will compare the simulation results of the two methods.

並列關鍵字

ac

參考文獻

[1] C.-L. Teng, “An equivalent circuit approach to mixed-level device and circuit

[2] S. J. Li, C. H. Ho, C. N. Liao, and Y. T. Tsai, “Log-scale method with equivalent circuit model in semiconductor device simulations, ” to be appeared in Journal of the Chinese Institute of Engineers.

Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan,

Republic of China, Jun, Chapter 2, pp. 5-10, 1997.

[3] C. Durney, L. D. Harris, and C. L. Alley, Electric Circuits, Taipei Publications Trading Company, Chapter 2, pp. 28-37, 1982.